| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
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|
タイトル |
Electronic structure of a narrow-gap semiconductor FeGa3 investigated by photoemission and inverse photoemission spectroscopies |
|
言語 |
en |
| 作成者 |
Arita, Masashi
Shimada, Kenya
Utsmi, Yuki
Morimoto, Osamu
Sato, Hitoshi
Namatame, Hirofumi
Taniguchi, Masaki
Hadano, Yuta
Takabatake, Toshiro
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| アクセス権 |
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|
アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
|
|
権利情報 |
Copyright (c) 2011 The American Physical Society |
| 主題 |
|
|
主題Scheme |
NDC |
|
主題 |
420 |
| 内容記述 |
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|
内容記述タイプ |
Other |
|
内容記述 |
We have performed a photoemission and inverse photoemission spectroscopic study of a narrow-gap semiconductor FeGa_3, in order to characterize the occupied and unoccupied electronic states. The energy-gap size was found to be ～0.4 eV, and the valence-band maximum (VBM) was located around the A point of the Brillouin zone. We observed a dispersive Ga 4sp derived band near the Fermi level (E_F), and Fe 3d narrow bands located at -0.5 and -1.1 eV away from E_F. In contrast to the case of FeSi, there was no temperature-dependent peak enhancement at the VBM on cooling. The observed density of states and band dispersions were reasonably reproduced by the LDA+U calculation with the on-site effective Coulomb interaction U_<eff> ～3 eV to the Fe 3d states. Present results indicate that, in spite of sizable U_<eff>/W ～0.6 (W: band width), electron correlation effects are not significant in FeGa_3 compared with FeSi since the VBM consists of the dispersive band with the reduced Fe 3d contribution, and the energy gap is large. |
| 出版者 |
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|
出版者 |
The American Physical Society |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
|
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|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1103/PhysRevB.83.245116 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://dx.doi.org/10.1103/PhysRevB.83.245116 |
| 収録物識別子 |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
1098-0121 |
| 収録物識別子 |
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|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA11187113 |
| 開始ページ |
|
|
開始ページ |
245116-1 |
| 書誌情報 |
Physical Review B
Physical Review B
巻 83,
号 24,
p. 245116-1-245116-5,
発行日 2011-06-22
|
| 旧ID |
31968 |
PhysRevB_83_245116.pdf (738.8 KB)
