{"created":"2025-02-21T04:12:45.809492+00:00","id":2008098,"links":{},"metadata":{"_buckets":{"deposit":"bee71c08-9abc-45f9-8143-9c850a3e4745"},"_deposit":{"created_by":41,"id":"2008098","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2008098"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02008098","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Electronic structure of a narrow-gap semiconductor FeGa3 investigated by photoemission and inverse photoemission spectroscopies","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Arita, Masashi","creatorNameLang":"en"}],"familyNames":[{"familyName":"Arita","familyNameLang":"en"}],"givenNames":[{"givenName":"Masashi","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Shimada, Kenya","creatorNameLang":"en"}],"familyNames":[{"familyName":"Shimada","familyNameLang":"en"}],"givenNames":[{"givenName":"Kenya","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Utsmi, Yuki","creatorNameLang":"en"}],"familyNames":[{"familyName":"Utsmi","familyNameLang":"en"}],"givenNames":[{"givenName":"Yuki","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Morimoto, Osamu","creatorNameLang":"en"}],"familyNames":[{"familyName":"Morimoto","familyNameLang":"en"}],"givenNames":[{"givenName":"Osamu","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Sato, Hitoshi","creatorNameLang":"en"}],"familyNames":[{"familyName":"Sato","familyNameLang":"en"}],"givenNames":[{"givenName":"Hitoshi","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Namatame, Hirofumi","creatorNameLang":"en"}],"familyNames":[{"familyName":"Namatame","familyNameLang":"en"}],"givenNames":[{"givenName":"Hirofumi","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Taniguchi, Masaki","creatorNameLang":"en"}],"familyNames":[{"familyName":"Taniguchi","familyNameLang":"en"}],"givenNames":[{"givenName":"Masaki","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Hadano, Yuta","creatorNameLang":"en"}],"familyNames":[{"familyName":"Hadano","familyNameLang":"en"}],"givenNames":[{"givenName":"Yuta","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Takabatake, Toshiro","creatorNameLang":"en"}],"familyNames":[{"familyName":"Takabatake","familyNameLang":"en"}],"givenNames":[{"givenName":"Toshiro","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2011 The American Physical Society"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"420","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"We have performed a photoemission and inverse photoemission spectroscopic study of a narrow-gap semiconductor FeGa_3, in order to characterize the occupied and unoccupied electronic states. The energy-gap size was found to be ～0.4 eV, and the valence-band maximum (VBM) was located around the A point of the Brillouin zone. We observed a dispersive Ga 4sp derived band near the Fermi level (E_F), and Fe 3d narrow bands located at -0.5 and -1.1 eV away from E_F. In contrast to the case of FeSi, there was no temperature-dependent peak enhancement at the VBM on cooling. The observed density of states and band dispersions were reasonably reproduced by the LDA+U calculation with the on-site effective Coulomb interaction U_<eff> ～3 eV to the Fe 3d states. Present results indicate that, in spite of sizable U_<eff>/W ～0.6 (W: band width), electron correlation effects are not significant in FeGa_3 compared with FeSi since the VBM consists of the dispersive band with the reduced Fe 3d contribution, and the energy gap is large.","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"The American Physical Society"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"1098-0121","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA11187113","subitem_source_identifier_type":"NCID"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"245116-1"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-06-22","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"24","bibliographicPageEnd":"245116-5","bibliographicPageStart":"245116-1","bibliographicVolumeNumber":"83","bibliographic_titles":[{"bibliographic_title":"Physical Review B"},{"bibliographic_title":"Physical Review B"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevB.83.245116","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1103/PhysRevB.83.245116","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"PhysRevB_83_245116.pdf","filesize":[{"value":"738.8 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2008098/files/PhysRevB_83_245116.pdf"},"version_id":"a30883bb-9de4-433f-bce0-ac97a7b0cfa0"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"31968"},"item_title":"Electronic structure of a narrow-gap semiconductor FeGa3 investigated by photoemission and inverse photoemission spectroscopies","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2008098","relation_version_is_last":true,"title":["Electronic structure of a narrow-gap semiconductor FeGa3 investigated by photoemission and inverse photoemission spectroscopies"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-22T03:10:35.195267+00:00"}