| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
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|
タイトル |
Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics |
|
言語 |
en |
| 作成者 |
Zhu, Shiyang
Nakajima, Anri
Ohashi, Takuo
Miyake, Hideharu
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
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権利情報 |
Copyright (c) 2005 American Institute of Physics. |
| 内容記述 |
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内容記述 |
The interface trap generation (Δ Nit) and fixed oxide charge buildup (Δ Not) under negative bias temperature instability (NBTI) of p -channel metal-oxide-semiconductor field-effect transistors (p MOSFETs) with ultrathin (2 nm) plasma-nitrided SiON gate dielectrics were studied using a modified direct-current-current-voltage method and a conventional subthreshold characteristic measurement. Different stress time dependences were shown for Δ Nit and Δ Not. At the earlier stress times, Δ Nit dominates the threshold voltage shift (Δ Vth) and Δ Not is negligible. With increasing stress time, the rate of increase of Δ Nit decreases continuously, showing a saturating trend for longer stress times, while Δ Not still has a power-law dependence on stress time so that the relative contribution of Δ Not increases. The thermal activation energy of Δ Nit and the NBTI lifetime of p MOSFETs, compared at a given stress voltage, are independent of the peak nitrogen concentration of the SiON film. This indicates that plasma nitridation is a more reliable method for incorporating nitrogen in the gate oxide. |
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言語 |
en |
| 出版者 |
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出版者 |
American Institute of Physics |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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識別子タイプ |
DOI |
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関連識別子 |
10.1063/1.2138372 |
| 関連情報 |
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|
識別子タイプ |
DOI |
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|
関連識別子 |
http://dx.doi.org/10.1063/1.2138372 |
| 収録物識別子 |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0021-8979 |
| 収録物識別子 |
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収録物識別子タイプ |
NCID |
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収録物識別子 |
AA00693547 |
| 書誌情報 |
Journal of Applied Physics
Journal of Applied Physics
巻 98,
号 11,
発行日 2005-12-01
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| 旧ID |
18600 |
JApplPhys_98_114504.pdf (145.0 KB)
