{"created":"2025-02-21T03:44:29.321770+00:00","id":2007194,"links":{},"metadata":{"_buckets":{"deposit":"fbf3fadb-7c9d-4095-a174-189ebc52a844"},"_deposit":{"created_by":41,"id":"2007194","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2007194"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02007194","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Zhu, Shiyang","creatorNameLang":"en"}],"familyNames":[{"familyName":"Zhu","familyNameLang":"en"}],"givenNames":[{"givenName":"Shiyang","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Nakajima, Anri","creatorNameLang":"en"}],"familyNames":[{"familyName":"Nakajima","familyNameLang":"en"}],"givenNames":[{"givenName":"Anri","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ohashi, Takuo","creatorNameLang":"en"}],"familyNames":[{"familyName":"Ohashi","familyNameLang":"en"}],"givenNames":[{"givenName":"Takuo","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Miyake, Hideharu","creatorNameLang":"en"}],"familyNames":[{"familyName":"Miyake","familyNameLang":"en"}],"givenNames":[{"givenName":"Hideharu","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2005 American Institute of Physics."}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"The interface trap generation (Δ Nit) and fixed oxide charge buildup (Δ Not) under negative bias temperature instability (NBTI) of p -channel metal-oxide-semiconductor field-effect transistors (p MOSFETs) with ultrathin (2 nm) plasma-nitrided SiON gate dielectrics were studied using a modified direct-current-current-voltage method and a conventional subthreshold characteristic measurement. Different stress time dependences were shown for Δ Nit and Δ Not. At the earlier stress times, Δ Nit dominates the threshold voltage shift (Δ Vth) and Δ Not is negligible. With increasing stress time, the rate of increase of Δ Nit decreases continuously, showing a saturating trend for longer stress times, while Δ Not still has a power-law dependence on stress time so that the relative contribution of Δ Not increases. The thermal activation energy of Δ Nit and the NBTI lifetime of p MOSFETs, compared at a given stress voltage, are independent of the peak nitrogen concentration of the SiON film. This indicates that plasma nitridation is a more reliable method for incorporating nitrogen in the gate oxide.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-12-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicVolumeNumber":"98","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"},{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.2138372","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.2138372","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"JApplPhys_98_114504.pdf","filesize":[{"value":"145.0 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2007194/files/JApplPhys_98_114504.pdf"},"version_id":"1f49fc9c-8e65-458f-afa3-1bc2b2ebdcb1"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"18600"},"item_title":"Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2007194","relation_version_is_last":true,"title":["Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-21T09:25:54.215802+00:00"}