| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
|
|
タイトル |
Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition |
|
言語 |
en |
| 作成者 |
Isobe, Yoshioki
Hara, Kiyohito
Navarro, Dondee
Takeda, Youichi
Ezaki, Tatsuya
Miura-Mattausch, Mitiko
|
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
|
|
権利情報 |
Copyright (c) 2007 The Institute of Electronics, Information and Communication Engineers |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
mosfet |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
shot noise |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
high frequency noise |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
simulation |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
sub-threshold current |
| 主題 |
|
|
主題Scheme |
NDC |
|
主題 |
540 |
| 内容記述 |
|
|
内容記述 |
We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). In our approach, shot noise in MOSFETs is calculated by employing the two dimensional device simulator MEDICI in conjunction with the shot noise model of p-n junction. The accuracy of the noise model has been demonstrated by comparing simulation results with measured noise data of p-n diodes. The intensity of shot noise in various n-MOSFET devices under various bias conditions was estimated beyond GHz operational frequency by using our simulation scheme. At DC or low-frequency region, sub-threshold current dominates the intensity of shot noise. Therefore, shot noise is independent on frequency in this region and its intensity is exponentially depends on VG, proportional to L-1, and almost independent on VD. At high-frequency region above GHz frequency, on the other hand, shot noise intensity is frequency dependent and is quite larger than that of low-frequency region. In particular, the intensity of the RF shot noise is almost independent on L, VD and VG. This suggests that high-frequency shot noise intensity is decided only by the conditions of source-bulk junction. |
|
言語 |
en |
| 出版者 |
|
|
出版者 |
電子情報通信学会 |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
AO |
|
出版タイプResource |
http://purl.org/coar/version/c_b1a7d7d4d402bcce |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1093/ietele/e90-c.4.885 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://dx.doi.org/10.1093/ietele/e90-c.4.885 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0916-8524 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA10826283 |
| 開始ページ |
|
|
開始ページ |
885 |
| 書誌情報 |
IEICE TRANSACTIONS on Electronics
IEICE TRANSACTIONS on Electronics
巻 E90C,
号 4,
p. 885-894,
発行日 2007
|
| 旧ID |
20759 |
IEICETransElectron_E90C-4_885.pdf (542.1 KB)
