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Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition
https://hiroshima.repo.nii.ac.jp/records/2007045
https://hiroshima.repo.nii.ac.jp/records/20070452c5d23d1-adf0-41e4-a3c3-9f2813a0435b
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
IEICETransElectron_E90C-4_885.pdf (542.1 KB)
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| Item type | デフォルトアイテムタイプ_（フル）(1) | |||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2023-03-18 | |||||||||||||||||
| タイトル | ||||||||||||||||||
| タイトル | Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 作成者 |
Isobe, Yoshioki
× Isobe, Yoshioki
× Hara, Kiyohito
× Navarro, Dondee
× Takeda, Youichi
× Ezaki, Tatsuya
× Miura-Mattausch, Mitiko
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| アクセス権 | ||||||||||||||||||
| アクセス権 | open access | |||||||||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||||||||
| 権利情報 | ||||||||||||||||||
| 権利情報 | Copyright (c) 2007 The Institute of Electronics, Information and Communication Engineers | |||||||||||||||||
| 主題 | ||||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||
| 主題 | mosfet | |||||||||||||||||
| 主題 | ||||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||
| 主題 | shot noise | |||||||||||||||||
| 主題 | ||||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||
| 主題 | high frequency noise | |||||||||||||||||
| 主題 | ||||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||
| 主題 | simulation | |||||||||||||||||
| 主題 | ||||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||
| 主題 | sub-threshold current | |||||||||||||||||
| 主題 | ||||||||||||||||||
| 主題Scheme | NDC | |||||||||||||||||
| 主題 | 540 | |||||||||||||||||
| 内容記述 | ||||||||||||||||||
| 内容記述 | We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). In our approach, shot noise in MOSFETs is calculated by employing the two dimensional device simulator MEDICI in conjunction with the shot noise model of p-n junction. The accuracy of the noise model has been demonstrated by comparing simulation results with measured noise data of p-n diodes. The intensity of shot noise in various n-MOSFET devices under various bias conditions was estimated beyond GHz operational frequency by using our simulation scheme. At DC or low-frequency region, sub-threshold current dominates the intensity of shot noise. Therefore, shot noise is independent on frequency in this region and its intensity is exponentially depends on VG, proportional to L-1, and almost independent on VD. At high-frequency region above GHz frequency, on the other hand, shot noise intensity is frequency dependent and is quite larger than that of low-frequency region. In particular, the intensity of the RF shot noise is almost independent on L, VD and VG. This suggests that high-frequency shot noise intensity is decided only by the conditions of source-bulk junction. | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 出版者 | ||||||||||||||||||
| 出版者 | 電子情報通信学会 | |||||||||||||||||
| 言語 | ||||||||||||||||||
| 言語 | eng | |||||||||||||||||
| 資源タイプ | ||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||
| 出版タイプ | ||||||||||||||||||
| 出版タイプ | AO | |||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_b1a7d7d4d402bcce | |||||||||||||||||
| 関連情報 | ||||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||
| 関連識別子 | 10.1093/ietele/e90-c.4.885 | |||||||||||||||||
| 関連情報 | ||||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||
| 関連識別子 | http://dx.doi.org/10.1093/ietele/e90-c.4.885 | |||||||||||||||||
| 収録物識別子 | ||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||
| 収録物識別子 | 0916-8524 | |||||||||||||||||
| 収録物識別子 | ||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||
| 収録物識別子 | AA10826283 | |||||||||||||||||
| 開始ページ | ||||||||||||||||||
| 開始ページ | 885 | |||||||||||||||||
| 書誌情報 |
IEICE TRANSACTIONS on Electronics IEICE TRANSACTIONS on Electronics 巻 E90C, 号 4, p. 885-894, 発行日 2007 |
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| 旧ID | 20759 | |||||||||||||||||
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Cite as
Isobe, Yoshioki, Hara, Kiyohito, Navarro, Dondee, Takeda, Youichi, Ezaki, Tatsuya, Miura-Mattausch, Mitiko, n.d., Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition: 電子情報通信学会, 885– p.
