{"created":"2025-02-21T03:39:39.015989+00:00","id":2007045,"links":{},"metadata":{"_buckets":{"deposit":"0b503c8f-514f-48fe-af7f-b6f8b63116c6"},"_deposit":{"created_by":41,"id":"2007045","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2007045"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02007045","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Isobe, Yoshioki","creatorNameLang":"en"}],"familyNames":[{"familyName":"Isobe","familyNameLang":"en"}],"givenNames":[{"givenName":"Yoshioki","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Hara, Kiyohito","creatorNameLang":"en"}],"familyNames":[{"familyName":"Hara","familyNameLang":"en"}],"givenNames":[{"givenName":"Kiyohito","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Navarro, Dondee","creatorNameLang":"en"}],"familyNames":[{"familyName":"Navarro","familyNameLang":"en"}],"givenNames":[{"givenName":"Dondee","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Takeda, Youichi","creatorNameLang":"en"}],"familyNames":[{"familyName":"Takeda","familyNameLang":"en"}],"givenNames":[{"givenName":"Youichi","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ezaki, Tatsuya","creatorNameLang":"en"}],"familyNames":[{"familyName":"Ezaki","familyNameLang":"en"}],"givenNames":[{"givenName":"Tatsuya","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Miura-Mattausch, Mitiko","creatorNameLang":"en"}],"familyNames":[{"familyName":"Miura-Mattausch","familyNameLang":"en"}],"givenNames":[{"givenName":"Mitiko","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2007 The Institute of Electronics, Information and Communication Engineers"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"mosfet","subitem_subject_scheme":"Other"},{"subitem_subject":"shot noise","subitem_subject_scheme":"Other"},{"subitem_subject":"high frequency noise","subitem_subject_scheme":"Other"},{"subitem_subject":"simulation","subitem_subject_scheme":"Other"},{"subitem_subject":"sub-threshold current","subitem_subject_scheme":"Other"},{"subitem_subject":"540","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). In our approach, shot noise in MOSFETs is calculated by employing the two dimensional device simulator MEDICI in conjunction with the shot noise model of p-n junction. The accuracy of the noise model has been demonstrated by comparing simulation results with measured noise data of p-n diodes. The intensity of shot noise in various n-MOSFET devices under various bias conditions was estimated beyond GHz operational frequency by using our simulation scheme. At DC or low-frequency region, sub-threshold current dominates the intensity of shot noise. Therefore, shot noise is independent on frequency in this region and its intensity is exponentially depends on VG, proportional to L-1, and almost independent on VD. At high-frequency region above GHz frequency, on the other hand, shot noise intensity is frequency dependent and is quite larger than that of low-frequency region. In particular, the intensity of the RF shot noise is almost independent on L, VD and VG. This suggests that high-frequency shot noise intensity is decided only by the conditions of source-bulk junction.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"電子情報通信学会"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"0916-8524","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA10826283","subitem_source_identifier_type":"NCID"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"885"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"894","bibliographicPageStart":"885","bibliographicVolumeNumber":"E90C","bibliographic_titles":[{"bibliographic_title":"IEICE TRANSACTIONS on Electronics"},{"bibliographic_title":"IEICE TRANSACTIONS on Electronics"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_b1a7d7d4d402bcce","subitem_version_type":"AO"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1093/ietele/e90-c.4.885","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1093/ietele/e90-c.4.885","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"IEICETransElectron_E90C-4_885.pdf","filesize":[{"value":"542.1 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2007045/files/IEICETransElectron_E90C-4_885.pdf"},"version_id":"366fbc49-4ff1-4417-8f94-e3e3a55e0e51"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"20759"},"item_title":"Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2007045","relation_version_is_last":true,"title":["Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-21T09:01:48.621246+00:00"}