| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
|
|
タイトル |
Interface trap generation induced by charge pumping current under dynamic oxide field stresses |
|
言語 |
en |
| 作成者 |
Zhu, Shiyang
Nakajima, Anri
Ohashi, Takuo
Miyake, Hideharu
|
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
|
|
権利情報 |
Copyright (c) 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
Charge pumping |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
nterface traps |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
MOSFET |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
Reliability |
| 主題 |
|
|
主題Scheme |
NDC |
|
主題 |
540 |
| 内容記述 |
|
|
内容記述 |
Stress-induced interface trap generation (ΔNit) in the mid-channel region of standard n-channel MOSFETs with ultrathin plasma-nitrided SiO2 films (2.34 and 3.48 nm) were systematically studied under static and dynamic (both bipolar and unipolar) oxide field stresses over a wide frequency range from 1 to 10[7] Hz using a direct-current current-voltage measurement. At the bipolar stresses, ΔNit increases with the stress frequency significantly when the frequency is larger than ∼104 Hz while it saturates or decreases at the frequency larger than ∼107 Hz. The frequency dependence of the ΔNit enhancement can be attributed to a charge pumping current during the dynamic stress. Nitrogen incorporation increases not only ΔNit, but also the frequency dependence. |
|
言語 |
en |
| 出版者 |
|
|
出版者 |
IEEE |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1109/LED.2005.843783 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://dx.doi.org/10.1109/LED.2005.843783 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0741-3106 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00231428 |
| 開始ページ |
|
|
開始ページ |
216 |
| 書誌情報 |
IEEE Electron Device Letters
IEEE Electron Device Letters
巻 26,
号 3,
p. 216-218,
発行日 2005-03
|
| 旧ID |
15052 |
IEEEElectDevLett_26_216.pdf (136.6 KB)
