{"created":"2025-02-21T03:38:09.345894+00:00","id":2006995,"links":{},"metadata":{"_buckets":{"deposit":"320495b8-39b1-4c8f-baed-33601f158765"},"_deposit":{"created_by":41,"id":"2006995","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2006995"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02006995","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Interface trap generation induced by charge pumping current under dynamic oxide field stresses","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Zhu, Shiyang","creatorNameLang":"en"}],"familyNames":[{"familyName":"Zhu","familyNameLang":"en"}],"givenNames":[{"givenName":"Shiyang","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Nakajima, Anri","creatorNameLang":"en"}],"familyNames":[{"familyName":"Nakajima","familyNameLang":"en"}],"givenNames":[{"givenName":"Anri","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ohashi, Takuo","creatorNameLang":"en"}],"familyNames":[{"familyName":"Ohashi","familyNameLang":"en"}],"givenNames":[{"givenName":"Takuo","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Miyake, Hideharu","creatorNameLang":"en"}],"familyNames":[{"familyName":"Miyake","familyNameLang":"en"}],"givenNames":[{"givenName":"Hideharu","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"Charge pumping","subitem_subject_scheme":"Other"},{"subitem_subject":"nterface traps","subitem_subject_scheme":"Other"},{"subitem_subject":"MOSFET","subitem_subject_scheme":"Other"},{"subitem_subject":"Reliability","subitem_subject_scheme":"Other"},{"subitem_subject":"540","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"Stress-induced interface trap generation (ΔNit) in the mid-channel region of standard n-channel MOSFETs with ultrathin plasma-nitrided SiO2 films (2.34 and 3.48 nm) were systematically studied under static and dynamic (both bipolar and unipolar) oxide field stresses over a wide frequency range from 1 to 10[7] Hz using a direct-current current-voltage measurement. At the bipolar stresses, ΔNit increases with the stress frequency significantly when the frequency is larger than ∼104 Hz while it saturates or decreases at the frequency larger than ∼107 Hz. The frequency dependence of the ΔNit enhancement can be attributed to a charge pumping current during the dynamic stress. Nitrogen incorporation increases not only ΔNit, but also the frequency dependence.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"0741-3106","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA00231428","subitem_source_identifier_type":"NCID"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"216"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"218","bibliographicPageStart":"216","bibliographicVolumeNumber":"26","bibliographic_titles":[{"bibliographic_title":"IEEE Electron Device Letters"},{"bibliographic_title":"IEEE Electron Device Letters"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/LED.2005.843783","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1109/LED.2005.843783","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"IEEEElectDevLett_26_216.pdf","filesize":[{"value":"136.6 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2006995/files/IEEEElectDevLett_26_216.pdf"},"version_id":"7276e306-96c8-4562-942b-72102a97fdf4"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"15052"},"item_title":"Interface trap generation induced by charge pumping current under dynamic oxide field stresses","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2006995","relation_version_is_last":true,"title":["Interface trap generation induced by charge pumping current under dynamic oxide field stresses"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-21T08:57:07.569967+00:00"}