WEKO3
アイテム
p-MOSFETにおけるNBTI(Negative Bias Temperature Instability)効果のモデル開発
https://hiroshima.repo.nii.ac.jp/records/2005009
https://hiroshima.repo.nii.ac.jp/records/2005009e627a532-4a8a-4dbd-b3f0-1097710d6ace
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
k6227_3.pdf (2.9 MB)
|
||
|
k6227_1.pdf (119.9 KB)
|
||
|
k6227_2.pdf (209.5 KB)
|
| Item type | デフォルトアイテムタイプ_（フル）(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2023-03-18 | |||||||||
| タイトル | ||||||||||
| タイトル | Development and Verification of Compact Model for NBTI (Negative Bias Temperature Instability) Effect Observed in p-MOSFET | |||||||||
| 言語 | en | |||||||||
| タイトル | ||||||||||
| タイトル | p-MOSFETにおけるNBTI(Negative Bias Temperature Instability)効果のモデル開発 | |||||||||
| 言語 | ja | |||||||||
| 作成者 |
馬, 晨月
× 馬, 晨月
|
|||||||||
| アクセス権 | ||||||||||
| アクセス権 | open access | |||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
| 権利情報 | ||||||||||
| 権利情報 | Copyright(c) by Author | |||||||||
| 主題 | ||||||||||
| 主題Scheme | NDC | |||||||||
| 主題 | 570 | |||||||||
| 内容記述 | ||||||||||
| 内容記述 | In the next 10 years, the dimension of semiconductor devices will scale towards 10nm. Consequently the reliability of ULSI circuits and systems faces enlarged challenges due to the introduction of the new materials and non-classical structures. Especially, the negative bias temperature instability (NBTI) effect is one of the most important reliability concerns since it deteriorates the drive-capability of the p-MOSFETs by degrading threshold voltage, drain current, transconductance, resulting in output delay. An accurate predictive NBTI effect model is required for protective circuit design and reduction of design tolerances to save the layout area. At present, numerous NBTI predictive model based on different physical theories have been developed, including hydrogen reaction-diffusion theory, hole-trapping theory, energy profile based theory and so on. However, an effective NBTI model must accurately predict the following features: 1) Long term degradation under DC stress conditions. 2) AC degradation with various frequencies and duty cycles. 3) The recovery characteristic in short term and long term regions. 4) Temperature dependence.…… | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_db06 | |||||||||
| 資源タイプ | doctoral thesis | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | NA | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_be7fb7dd8ff6fe43 | |||||||||
| 関連情報 | ||||||||||
| 関連タイプ | references | |||||||||
| 関連名称 | Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation. Chenyue Ma, Bo Li, Lining Zhang, Feng Liu, Jin He, Xing Zhang, Xinnan Lin. Journal of Computational and Theoretical Nanoscience, vol. 7, pp. 107-114, (2010). | |||||||||
| 関連情報 | ||||||||||
| 関連タイプ | references | |||||||||
| 関連名称 | Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect. Chenyue Ma, Hans Jurgen Mattausch, Masataka Miyake, Kazuya Matsuzawa, Takahiro Iizuka, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinari Kinoshita, Takahiko Arakawa, Jin He, and Mitiko Miura-Mattausch. Japanese Journal of Applied Physics, vol. 51, pp. 02BC07-1-02BC07-5 (2012). | |||||||||
| 関連情報 | ||||||||||
| 関連タイプ | references | |||||||||
| 関連名称 | Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. Chenyue Ma, Hans Jurgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, and Mitiko Miura-Mattausch. IEICE, vol. E96-C, accepted (2013) | |||||||||
| 学位授与番号 | ||||||||||
| 学位授与番号 | 甲第6227号 | |||||||||
| 学位名 | ||||||||||
| 言語 | ja | |||||||||
| 学位名 | 博士(工学) | |||||||||
| 学位名 | ||||||||||
| 言語 | en | |||||||||
| 学位名 | Engineering | |||||||||
| 学位授与年月日 | ||||||||||
| 学位授与年月日 | 2013-09-25 | |||||||||
| 学位授与機関 | ||||||||||
| 学位授与機関識別子Scheme | kakenhi | |||||||||
| 学位授与機関識別子 | 15401 | |||||||||
| 言語 | ja | |||||||||
| 学位授与機関名 | 広島大学 | |||||||||
| 学位授与機関 | ||||||||||
| 言語 | en | |||||||||
| 学位授与機関名 | Hiroshima University | |||||||||
| 旧ID | 35128 | |||||||||
