| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
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|
タイトル |
Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence |
|
言語 |
en |
| 作成者 |
Hirahara, Taiki
Ebisuoka, Ryoya
Oka, Takushi
Nakasuga, Tomoaki
Tajima, Shingo
Watanabe, Kenji
Taniguchi, Takashi
Yagi, Ryuta
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| アクセス権 |
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|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
|
|
権利情報 |
© The Author(s) 2018. Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
| 内容記述 |
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内容記述 |
Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been studied in 1–3 layer graphene in a number of efforts to control the band gap to obtain a large on-off ratio. On the other hand, the transport property of multilayer graphene with more than three layers is less well understood. Here we show a new aspect of multilayer graphene. We found that four-layer graphene shows intrinsic peak structures in the gate voltage dependence of its resistance at zero magnetic field. Measurement of quantum oscillations in magnetic field confirmed that the peaks originate from the specific band structure of graphene and appear at the carrier density for the bottoms of conduction bands and valence bands. The intrinsic peak structures should generally be observed in AB-stacked multilayer graphene. The present results would be significant for understanding the physics of graphene and making graphene FET devices. |
|
言語 |
en |
| 内容記述 |
|
|
内容記述タイプ |
Other |
|
内容記述 |
This work was supported by KAKENHI No. 25107003 from MEXT Japan. |
| 出版者 |
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|
出版者 |
Nature Research |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
|
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|
識別子タイプ |
DOI |
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|
関連識別子 |
10.1038/s41598-018-32214-7 |
| 関連情報 |
|
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|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.1038/s41598-018-32214-7 |
| 収録物識別子 |
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|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
2045-2322 |
| 開始ページ |
|
|
開始ページ |
13992 |
| 書誌情報 |
Scientific Reports
Scientific Reports
巻 8,
p. 13992,
発行日 2018-09-18
|
| 旧ID |
48708 |
SciRep_8_13992.pdf (4.3 MB)
