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Controlling the structural transition at the Néel point of CrN epitaxial thin films using epitaxial growth

https://hiroshima.repo.nii.ac.jp/records/2008288
https://hiroshima.repo.nii.ac.jp/records/2008288
037e5fa2-6f9e-403e-80e5-0d53e2093c1e
名前 / ファイル ライセンス アクション
PhysRevB_75_054416.pdf PhysRevB_75_054416.pdf (154.0 KB)
Item type デフォルトアイテムタイプ_(フル)(1)
公開日 2023-03-18
タイトル
タイトル Controlling the structural transition at the Néel point of CrN epitaxial thin films using epitaxial growth
言語 en
作成者 Inumaru, Kei

× Inumaru, Kei

en Inumaru, Kei

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Koyama, Kunihiko

× Koyama, Kunihiko

en Koyama, Kunihiko

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Imo-oka, Naoya

× Imo-oka, Naoya

en Imo-oka, Naoya

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Yamanaka, Shoji

× Yamanaka, Shoji

en Yamanaka, Shoji

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利情報
権利情報 Copyright (c) 2007 American Physical Society
主題
主題Scheme NDC
主題 420
内容記述
内容記述 Chromium nitride (CrN) films were epitaxially grown on α- Al2 O3 (0001) and MgO (001) substrates by pulsed laser deposition at 973 K under nitrogen radical irradiation, and the structural change of the films was investigated at around the Néel temperature of CrN (∼270 K) by temperature-controlled x-ray diffraction experiments. Bulk cubic CrN is known to show monoclinic distortion below the Néel temperature. The CrN film grown on MgO(001) with the CrN(001) plane parallel to the substrate surface, exhibited a clear structural change at around 260 K. On the other hand, on α- Al2 O3 (0001) substrates, the CrN phase grew with its (111) planes parallel to the substrate surface, and showed no structural change at the Néel temperature. The different orientation of the epitaxial films can explain the different behavior of the films: The structural transition of bulk-CrN causes large variations in the interatomic distances and bond angles on the (111) plane, but varies little on the (001) plane. In the case of thin films, the α- Al2 O3 (0001) substrate surface could prevent the (111)-oriented film from distorting its structure by fixing atom positions on the CrN(111) interfaces of the film. In accordance with the structural behavior of the films, the (111)-oriented CrN film on α- Al2 O3 (0001) showed no anomaly in its metallic conductivity around the Néel temperature. On the other hand, the (001)-oriented CrN on MgO showed a steep increase in electrical conductivity, accompanied by a lattice distortion below the Néel point. These results highlight an example that epitaxy could be used to control the existence of structural transitions, further accompanied by an antiferromagnetic ordering, which is closely related to the electronic properties of materials.
言語 en
出版者
出版者 American Physical Society
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
関連情報
識別子タイプ DOI
関連識別子 10.1103/PhysRevB.75.054416
関連情報
識別子タイプ DOI
関連識別子 http://dx.doi.org/10.1103/PhysRevB.75.054416
収録物識別子
収録物識別子タイプ NCID
収録物識別子 AA11187113
収録物識別子
収録物識別子タイプ ISSN
収録物識別子 1098-0121
開始ページ
開始ページ 054416
書誌情報 Physical Review B - Condensed Matter and Materials Physics
Physical Review B - Condensed Matter and Materials Physics

巻 75, 号 5, p. 054416, 発行日 2007-02-22
旧ID 16631
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