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Temperature dependence of the electronic structure of C60 films adsorbed on Si(001)-(2x1) and Si(111)-(7x7) surfaces

https://hiroshima.repo.nii.ac.jp/records/2008171
https://hiroshima.repo.nii.ac.jp/records/2008171
9be46034-3212-4681-a1a9-864e5dda6af4
名前 / ファイル ライセンス アクション
PhysRevB_60_2579.pdf PhysRevB_60_2579.pdf (393.7 KB)
Item type デフォルトアイテムタイプ_(フル)(1)
公開日 2023-03-18
タイトル
タイトル Temperature dependence of the electronic structure of C60 films adsorbed on Si(001)-(2x1) and Si(111)-(7x7) surfaces
言語 en
作成者 Sakamoto, Kazuyuki

× Sakamoto, Kazuyuki

en Sakamoto, Kazuyuki

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Kondo, Daiyu

× Kondo, Daiyu

en Kondo, Daiyu

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Ushimi, Yoshimitsu

× Ushimi, Yoshimitsu

en Ushimi, Yoshimitsu

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Harada, Masashi

× Harada, Masashi

en Harada, Masashi

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Kimura, Akio

× Kimura, Akio

en Kimura, Akio

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Kakizaki, Akito

× Kakizaki, Akito

en Kakizaki, Akito

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Suto, Shozo

× Suto, Shozo

en Suto, Shozo

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利情報
権利情報 Copyright (c) 1999 The American Physical Society.
内容記述
内容記述 We report here the temperature-dependent measurements of the valence spectra, the C 1s and the Si 2p core level spectra of the one monolayer C60 film adsorbed on Si(001)-(2x1) and Si(111)-(7x7) surfaces, using photoelectron spectroscopy. At 300 K, most C60 molecules are physisorbed with the coexistence of minority chemisorbed species on both Si(001)-(2x1) and Si(111)-(7x7) surfaces. After annealing the samples at 670 K, C60 molecules change the bonding nature to a chemisorption that has both covalent and ionic characters. The covalent bonding orbital is observed at a binding energy of 2.10 eV on both Si surfaces. The amount of charge transfer is estimated to be 0.19 electrons per C60 molecule on the Si(001) surface, and to be 0.21 electrons per molecule on the Si(111) surface. We consider the origin of the change in bonding nature to the different distance between two dangling bonds that results from the rearrangement of the surface Si atoms. After annealing at 1070 K, C60 molecules decompose and the SiC formation takes progress at the interface. On the Si(001) surface, the molecular orbitals (MO's) disappear at 1120 K and the binding energies of peaks observed in the valence spectra indicate the formation of SiC islands at this temperature. On the Si(111) surface, the disappearance of MO's and the formation of SiC islands are verified at 1170 K. The difference in formation temperature is attributed to the different surface structure.
言語 en
出版者
出版者 American Physical Society
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
関連情報
識別子タイプ DOI
関連識別子 10.1103/PhysRevB.60.2579
関連情報
識別子タイプ DOI
関連識別子 http://dx.doi.org/10.1103/PhysRevB.73.094437
収録物識別子
収録物識別子タイプ ISSN
収録物識別子 0163-1829
収録物識別子
収録物識別子タイプ NCID
収録物識別子 AA11187113
開始ページ
開始ページ 2579
書誌情報 Physical Review B - Condensed Matter and Materials Physics
Physical Review B - Condensed Matter and Materials Physics

巻 60, 号 4, p. 2579-2591, 発行日 1999-01-25
旧ID 19369
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