| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
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タイトル |
Impurity-induced localization of quasiparticles in the presence of a pseudogap in CeNiSn |
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言語 |
en |
| 作成者 |
Takabatake, Toshiro
Echizen, Yuji
Yoshino, Takenobu
Kobayashi, Katsushi
Nakamoto, Go
Fujii, Hironobu
Sera, Masafumi
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
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権利情報 |
Copyright (c) 1999 The American Physical Society. |
| 内容記述 |
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内容記述 |
The effect of doping in CeNiSn has been studied by the measurements of electrical resistivity, Hall coefficient and magnetic susceptibility for single crystals of CeNi1-xTxSn (T=Co, Cu, and Pt) and Ce1-yLayNiSn (x,y = 0.01 and 0.05). All these impurities are found to increase the residual resistivity by several times up to 1 mΩ cm for x or y = 0.01, while for x or y = 0.05 the resistivities along the orthorhombic b and c axes saturate to values smaller than those for 0.01. Furthermore, the low-temperature increase in the Hall mobility of CeNiSn was found to be strongly suppressed in a similar way by all the impurities. These results indicate that residual carriers in CeNiSn with an anisotropic gap are immobilized by any impurity substituted either in the 4f site or the non-4f site. |
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言語 |
en |
| 出版者 |
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出版者 |
American Physical Society |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 出版タイプ |
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|
出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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識別子タイプ |
DOI |
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関連識別子 |
10.1103/PhysRevB.59.13878 |
| 関連情報 |
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|
識別子タイプ |
DOI |
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関連識別子 |
http://dx.doi.org/10.1103/PhysRevB.55.R692 |
| 収録物識別子 |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
1098-0121 |
| 収録物識別子 |
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収録物識別子タイプ |
NCID |
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収録物識別子 |
AA11187113 |
| 開始ページ |
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開始ページ |
13 878 |
| 書誌情報 |
Physical Review B - Condensed Matter and Materials Physics
Physical Review B - Condensed Matter and Materials Physics
巻 59,
号 21,
p. 13 878-13 881,
発行日 1999-06-01
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| 旧ID |
19294 |
PhysRevB_59_13878.pdf (79.8 KB)
