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Mechanistic Insight on the Formation of GaN:ZnO Solid Solution from Zn–Ga Layered Double Hydroxide Using Urea as the Nitriding Agent

https://hiroshima.repo.nii.ac.jp/records/2007071
https://hiroshima.repo.nii.ac.jp/records/2007071
346e32cc-f61c-49eb-a68a-95fcac777e8f
名前 / ファイル ライセンス アクション
InorgChem_57_13953.pdf InorgChem_57_13953.pdf (3.0 MB)
Item type デフォルトアイテムタイプ_(フル)(1)
公開日 2023-03-18
タイトル
タイトル Mechanistic Insight on the Formation of GaN:ZnO Solid Solution from Zn–Ga Layered Double Hydroxide Using Urea as the Nitriding Agent
言語 en
作成者 Katagiri, Kiyofumi

× Katagiri, Kiyofumi

en Katagiri, Kiyofumi

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Hayashi, Yuki

× Hayashi, Yuki

en Hayashi, Yuki

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Yoshiyuki, Risa

× Yoshiyuki, Risa

en Yoshiyuki, Risa

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Inumaru, Kei

× Inumaru, Kei

en Inumaru, Kei

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Uchiyama, Tomoki

× Uchiyama, Tomoki

en Uchiyama, Tomoki

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Nagata, Noriyuki

× Nagata, Noriyuki

en Nagata, Noriyuki

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Uchimoto, Yoshiharu

× Uchimoto, Yoshiharu

en Uchimoto, Yoshiharu

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Miyoshi, Akinobu

× Miyoshi, Akinobu

en Miyoshi, Akinobu

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Maeda, Kazuhiko

× Maeda, Kazuhiko

en Maeda, Kazuhiko

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利情報
権利情報 Copyright (c) 2018 American Chemical Society
権利情報
権利情報 This document is the Accepted Manuscript version of a Published Work that appeared in final form in 'Inorganic Chemistry', copyright c American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.inorgchem.8b02498.
権利情報
権利情報 This is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。
主題
主題Scheme NDC
主題 430
内容記述
内容記述 A solid solution of GaN and ZnO (GaN:ZnO) is promising as a photocatalyst for visible light-driven overall water splitting to produce H2. However, several obstacles still exist in the conventional preparation procedure of GaN:ZnO. For example, the atomic distributions of Zn and Ga are non-uniform in GaN:ZnO when a mixture of the metal oxides, i.e., Ga2O3 and ZnO, is used as a precursor. In addition, GaN:ZnO is generally prepared under harmful NH3 flow for long durations at high temperatures. Here, a facile synthesis of GaN:ZnO with homogeneous atomic composition via a simple and safe procedure is reported. A layered double hydroxide (LDH) containing Zn2+ and Ga3+ was used to increase the uniformity of the atomic distributions of Zn and Ga in GaN:ZnO. We employed urea as a nitriding agent instead of gaseous NH3 to increase the safety of the reaction. Through the optimization of reaction conditions such as heattreatment temperature and content of urea, single-phase GaN:ZnO was successfully obtained. In addition, the nitridation mechanism using urea was investigated in detail. NH3 released from the thermal decomposition of urea did not directly nitride the LDH precursor. X-ray absorption and infrared spectroscopies revealed that Zn(CN2)-like intermediate species were generated at the middle temperature range and Ga–N bonds formed at high temperature along with dissociation of CO and CO2.
言語 en
内容記述
内容記述タイプ Other
内容記述 This file includes Supporting Information.
内容記述
内容記述タイプ Other
内容記述 This work was supported by JSPS KAKENHI Grant Number JP16H06438, JP16H06441, JP17H05483, JP17H03392. This work was partly supported by the Center for Functional Nano Oxide at Hiroshima University. The synchrotron radiation experiments were performed at the BL01B1 beamline of SPring-8 with the approval of the Japan Synchrotron Radiation Research 32 Institute (JASRI) (Proposal No. 2017B1043 and 2018A1749).
出版者
出版者 American Chemical Society
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
出版タイプ
出版タイプ AO
出版タイプResource http://purl.org/coar/version/c_b1a7d7d4d402bcce
関連情報
識別子タイプ DOI
関連識別子 10.1021/acs.inorgchem.8b02498
関連情報
識別子タイプ PMID
関連識別子 30295474
収録物識別子
収録物識別子タイプ ISSN
収録物識別子 0020-1669
収録物識別子
収録物識別子タイプ ISSN
収録物識別子 1520-510X
開始ページ
開始ページ 13953
書誌情報 Inorganic Chemistry
Inorganic Chemistry

巻 57, 号 21, p. 13953-13962, 発行日 2018-11-05
旧ID 46552
備考 Post-print version/PDF may be used in an institutional repository after an embargo period of 12 months.
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