| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
|
|
タイトル |
Enhancement of BTI degradation in pMOSFETs under high-frequency bipolar gate bias |
|
言語 |
en |
| 作成者 |
Zhu, Shiyang
Nakajima, Anri
Ohashi, Takuo
Miyake, Hideharu
|
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
|
|
権利情報 |
Copyright (c) 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
Dynamic stress |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
Negative bias temperature instability (NBTI) |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
pMOSFETs |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
Recombination |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
Ultrathin gate oxide |
| 主題 |
|
|
主題Scheme |
NDC |
|
主題 |
540 |
| 内容記述 |
|
|
内容記述 |
Negative bias temperature (NBT) instability of p-MOSFETs with ultrathin SiON gate dielectric has been investigated under various gate bias configurations. The NBT-induced interface trap density (ΔNit) under unipolar bias is essentially lower than that under static bias, and is almost independent of the stress frequency up to 10 MHz. On the contrary, ΔNit under bipolar pulsed bias of frequency larger than about 10 kHz is significantly enhanced and exhibits a strong frequency dependence, which has faster generation rate and smaller activation energy as compared to other stress configurations. The degradation enhancement is attributed to the energy to be contributed by the recombination of trapped electrons and free holes upon the silicon surface potential reversal from accumulation to inversion. |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1109/LED.2005.848075 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://dx.doi.org/10.1109/LED.2005.848075 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0741-3106 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00231428 |
| 開始ページ |
|
|
開始ページ |
387 |
| 書誌情報 |
IEEE Electron Device Letters
IEEE Electron Device Letters
巻 26,
号 6,
p. 387-389,
発行日 2005-06
|
| 旧ID |
15051 |
IEEEElectDevLett_26_387.pdf (135.8 KB)
