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Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region
https://hiroshima.repo.nii.ac.jp/records/2006273
https://hiroshima.repo.nii.ac.jp/records/200627307995575-ef12-471e-8cd1-44c3d9596500
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ApplPhysLett_86_083501.pdf (69.5 KB)
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| Item type | デフォルトアイテムタイプ_（フル）(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2023-03-18 | |||||||||
| タイトル | ||||||||||
| タイトル | Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region | |||||||||
| 言語 | en | |||||||||
| 作成者 |
Zhu, Shiyang
× Zhu, Shiyang
× Nakajima, Anri
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| アクセス権 | ||||||||||
| アクセス権 | open access | |||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
| 権利情報 | ||||||||||
| 権利情報 | Copyright (c) 2005 American Institute of Physics. | |||||||||
| 内容記述 | ||||||||||
| 内容記述 | By stressing metal-oxide-semiconductor field-effect transistors with ultrathin silicon dioxide or oxynitride gate dielectrics under square wave form voltage at the MHz region, an abnormal enhancement of interface trap generation in the midchannel region has been observed at some special frequencies. A hypothesis, including self-accelerating interface trap generation originated from the positive feedback of a charge pumping current to be contributed by the stress-induced near-interface oxide traps and a resonant tunneling via the near interface oxide trap states at those frequencies, is proposed to explain the observed phenomenon. | |||||||||
| 言語 | en | |||||||||
| 出版者 | ||||||||||
| 出版者 | American Institute of Physics | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| 関連情報 | ||||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.1063/1.1857083 | |||||||||
| 関連情報 | ||||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1857083 | |||||||||
| 収録物識別子 | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0003-6951 | |||||||||
| 収録物識別子 | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00543431 | |||||||||
| 書誌情報 |
Applied Physics Letters Applied Physics Letters 巻 86, 号 8, 発行日 2005-02-21 |
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| 旧ID | 18597 | |||||||||
