| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
|
|
タイトル |
Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology |
|
言語 |
en |
| 作成者 |
Khosru, Quazi Deen Mohd
Nakajima, Anri
Yoshimoto, Takashi
Yokoyama, Shin
|
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
|
|
権利情報 |
Copyright (c) 2001 American Institute of Physics. |
| 内容記述 |
|
|
内容記述 |
We report a high-quality, ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectric. p+-polycrystalline silicon gate metal–oxide–semiconductor (MOS) capacitors with the proposed dielectrics showed enhanced reliability with respect to conventional SiO2. An exciting feature of suppressed soft-breakdown (SBD) events is observed in ramped voltage stressing which has been reconfirmed during time-dependent-dielectric breakdown measurements under constant field stressing. Introducing the idea of injected-carrier-induced localized physical damages resulting in the formation of conductive filaments near both Si/SiO2 and poly-Si/SiO2 interfaces, a model has been proposed to explain the SBD phenomena observed in the conventional SiO2 dielectrics. It is then consistently extended to explain the suppressed SBD in the proposed dielectrics. The reported dielectric can be a good choice to meet the urgent need for highly reliable ultrathin gate dielectrics in nanoscale complementary-MOS technology. |
|
言語 |
en |
| 出版者 |
|
|
出版者 |
American Institute of Physics |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1063/1.1420586 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://dx.doi.org/10.1063/1.1420586 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0003-6951 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00543431 |
| 開始ページ |
|
|
開始ページ |
3488 |
| 書誌情報 |
Applied Physics Letters
Applied Physics Letters
巻 79,
号 21,
p. 3488-3490,
発行日 2001-11-19
|
| 旧ID |
18587 |
ApplPhysLett_79_3488.pdf (52.0 KB)
