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Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)

https://hiroshima.repo.nii.ac.jp/records/2000890
https://hiroshima.repo.nii.ac.jp/records/2000890
db7c5ac9-34aa-4685-b6f8-ed38a54dfa29
名前 / ファイル ライセンス アクション
ECST_3_171.pdf ECST_3_171.pdf (515.3 KB)
Item type デフォルトアイテムタイプ_(フル)(1)
公開日 2023-03-18
タイトル
タイトル Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)
言語 en
作成者 Miyazaki, Seiichi

× Miyazaki, Seiichi

en Miyazaki, Seiichi

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Ohta, Akio

× Ohta, Akio

en Ohta, Akio

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Inumiya, Seiji

× Inumiya, Seiji

en Inumiya, Seiji

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Nara, Yasuo

× Nara, Yasuo

en Nara, Yasuo

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Yamada, Keisaku

× Yamada, Keisaku

en Yamada, Keisaku

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利情報
権利情報 Copyright (c) 2006 The Electrochemical Society
内容記述
内容記述 We present in-depth profiling of chemical bonding features and defect state density in ultrathin HfSiOxNy (Hf/(Hf+Si)=~43%) films with average nitrogen contents up to ~18at.% by using x-ray photoelectron spectroscopy (XPS) and total photoelectron yield spectroscopy (PYS) in combination with oxide thinning in a dilute HF solution. The films were prepared on pre-cleaned Si(100) by an atomic layer chemical vapor deposition (ALCVD) method and followed by plasma nitridation. By annealing at 1050°C in N2 ambience, Si-N bonding units in the films are increased as a result of thermal decomposition of Hf-Nx(x=2 and 3) units and the interfacial oxidation accompanied with nitrogen incorporation is caused. For the annealed samples, Hf ions coordinated with two N atoms are distributed with a profile peaked around 1nm from the top surface. Also, from the depth profiles of chemical compositions, which were determined from the change in the intensity at each thinning step, we found that the oxygen content becomes its minimum around ~1.2nm from the surface while the nitrogen content becomes its maximum within ~1.5nm from the surface. The result suggests that the surface re-oxidation is promoted coincidentally with the diffusion of N atoms generated by thermal decomposition of the Hf-Nx units during the N2- annealing. The photoelectron yield from filled defect states in the dielectric stacks was increased in the early stages of oxide thinning and then decreased with further progressive thinning. The depth profile of the defect states, which was derived from the change in the yield, shows that the defect state density becomes its maximum in the near-surface region where oxygen deficiency becomes significant. It is likely that the imbalance in chemical coordination between anions and cations is responsible for the defect generation.
言語 en
出版者
出版者 The Electrochemical Society
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_5794
資源タイプ conference paper
出版タイプ
出版タイプ AO
出版タイプResource http://purl.org/coar/version/c_b1a7d7d4d402bcce
関連情報
識別子タイプ DOI
関連識別子 10.1149/1.2355709
関連情報
識別子タイプ DOI
関連識別子 http://dx.doi.org/10.1149/1.2355709
収録物識別子
収録物識別子タイプ NCID
収録物識別子 BA8073444X
開始ページ
開始ページ 171
書誌情報 ECS Transactions
ECS Transactions

巻 3, 号 3, p. 171-180, 発行日 2006
旧ID 17060
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