{"created":"2025-02-21T04:34:54.692701+00:00","id":2008785,"links":{},"metadata":{"_buckets":{"deposit":"836bfee7-7e2a-4cd2-8c86-9914a3afe8f6"},"_deposit":{"created_by":41,"id":"2008785","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2008785"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02008785","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Electronic structure of boron-doped diamond with B-H complex and B pair","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Oguchi, Tamio","creatorNameLang":"en"}],"familyNames":[{"familyName":"Oguchi","familyNameLang":"en"}],"givenNames":[{"givenName":"Tamio","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"superconductivity","subitem_subject_scheme":"Other"},{"subitem_subject":"Diamond","subitem_subject_scheme":"Other"},{"subitem_subject":"B-H complex","subitem_subject_scheme":"Other"},{"subitem_subject":"boron pair","subitem_subject_scheme":"Other"},{"subitem_subject":"540","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"The electronic structure of boron-hydrogen complex and boron pair in diamond are studied by first-principles density-functional calculations with supercell models. The electronic structure calculated for the B-H complexes with C2v or C3v symmetry and the nearest-neighbor B pair is used to interpret recent experimental results such as B 1s X-ray photoemission spectroscopy, 11B nuclear quadruple resonance and B K-edge X-ray absorption spectroscopy, which cannot be explained solely by the isolated substitutional boron.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing Ltd"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"1468-6996","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA11561821","subitem_source_identifier_type":"NCID"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicVolumeNumber":"9","bibliographic_titles":[{"bibliographic_title":"Science and Technology of Advanced Materials"},{"bibliographic_title":"Science and Technology of Advanced Materials"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_b1a7d7d4d402bcce","subitem_version_type":"AO"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1088/1468-6996/9/4/044211","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1088/1468-6996/9/4/044211","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"STAM-D-08-00183.pdf","filesize":[{"value":"135.1 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2008785/files/STAM-D-08-00183.pdf"},"version_id":"adda62fd-9528-41ef-b2b0-2603e9b16f46"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"27769"},"item_title":"Electronic structure of boron-doped diamond with B-H complex and B pair","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2008785","relation_version_is_last":true,"title":["Electronic structure of boron-doped diamond with B-H complex and B pair"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-22T04:20:53.981786+00:00"}