{"created":"2025-02-21T04:27:08.981281+00:00","id":2008552,"links":{},"metadata":{"_buckets":{"deposit":"65764ae1-baa0-421f-84e8-e60610564baf"},"_deposit":{"created_by":41,"id":"2008552","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2008552"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02008552","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Orbital-Assisted Metal-Insulator Transition in VO2","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Haverkort, M.W.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Haverkort","familyNameLang":"en"}],"givenNames":[{"givenName":"M.W.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Hu, Z.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Hu","familyNameLang":"en"}],"givenNames":[{"givenName":"Z.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Tanaka, Arata","creatorNameLang":"en"}],"familyNames":[{"familyName":"Tanaka","familyNameLang":"en"}],"givenNames":[{"givenName":"Arata","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Reichelt, W.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Reichelt","familyNameLang":"en"}],"givenNames":[{"givenName":"W.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Streltsov, S.V.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Streltsov","familyNameLang":"en"}],"givenNames":[{"givenName":"S.V.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Korotin, M.A.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Korotin","familyNameLang":"en"}],"givenNames":[{"givenName":"M.A.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Anisimov, V.I.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Anisimov","familyNameLang":"en"}],"givenNames":[{"givenName":"V.I.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Hsieh, H.H.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Hsieh","familyNameLang":"en"}],"givenNames":[{"givenName":"H.H.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Lin, H.-J.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Lin","familyNameLang":"en"}],"givenNames":[{"givenName":"H.-J.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Chen, C.T.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Chen","familyNameLang":"en"}],"givenNames":[{"givenName":"C.T.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Khomskii, D.I.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Khomskii","familyNameLang":"en"}],"givenNames":[{"givenName":"D.I.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Tjeng, L.H.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Tjeng","familyNameLang":"en"}],"givenNames":[{"givenName":"L.H.","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2005 American Physical Society."}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"We found direct experimental evidence for an orbital switching in the V 3d states across the metalinsulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2;3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"0031-9007","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA00773679","subitem_source_identifier_type":"NCID"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-11-04","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"19","bibliographicVolumeNumber":"95","bibliographic_titles":[{"bibliographic_title":"Physical Review Letters"},{"bibliographic_title":"Physical Review Letters"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevLett.95.196404","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1103/PhysRevLett.95.196404","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"PhysRevLett_95_196404.pdf","filesize":[{"value":"361.8 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2008552/files/PhysRevLett_95_196404.pdf"},"version_id":"ab67323e-1dae-46bb-950c-76713684c1d4"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"18612"},"item_title":"Orbital-Assisted Metal-Insulator Transition in VO2","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2008552","relation_version_is_last":true,"title":["Orbital-Assisted Metal-Insulator Transition in VO2"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-22T03:53:54.723739+00:00"}