| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
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タイトル |
High-pressure Raman study of the Ba-doped silicon clathrate Ba 24Si100 up to 27 GPa |
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言語 |
en |
| 作成者 |
Shimizu, Hiroyasu
Kume, Tetsuji
Kuroda, Toyoki
Sasaki, Shigeo
Fukuoka, Hiroshi
Yamanaka, Shoji
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
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権利情報 |
Copyright (c) 2005 American Physical Society |
| 主題 |
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主題Scheme |
NDC |
|
主題 |
420 |
| 内容記述 |
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内容記述 |
High-pressure Raman scattering of type-III silicon clathrate Ba 24Si100 has been measured up to 27 GPa at room temperature. Low-frequency vibrational modes associated with Ba atoms inside three kinds of cages were found around 45-90 cm-1. The Si framework Raman bands were observed around 115-415 cm-1, which are altogether shifted toward lower frequencies as compared to those of type-I Ba 8Si46. High-pressure phase transition occurs at 6.5 GPa, which seems to be due to the structural distortion induced by the increasing guest(Ba)-host(Si) couplings. Ba24Si100 becomes irreversibly amorphous above 23 GPa. This pressure is lower than those of type-I Si clathrates, which suggests that type-III structure is less stable than type-I under high pressures. |
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言語 |
en |
| 出版者 |
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出版者 |
American Physical Society |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 出版タイプ |
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|
出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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識別子タイプ |
DOI |
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関連識別子 |
10.1103/PhysRevB.71.094108 |
| 関連情報 |
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|
識別子タイプ |
DOI |
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関連識別子 |
http://dx.doi.org/10.1103/PhysRevB.71.094108 |
| 収録物識別子 |
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収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA11187113 |
| 収録物識別子 |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1098-0121 |
| 開始ページ |
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開始ページ |
094108 |
| 書誌情報 |
Physical Review B - Condensed Matter and Materials Physics
Physical Review B - Condensed Matter and Materials Physics
巻 71,
号 9,
p. 094108,
発行日 2005-03-01
|
| 旧ID |
16634 |
PhysRevB_71_094108.pdf (127.9 KB)
