{"created":"2025-02-21T04:16:21.829496+00:00","id":2008205,"links":{},"metadata":{"_buckets":{"deposit":"49d51c31-d1e4-40b5-a4df-0526546b839e"},"_deposit":{"created_by":41,"id":"2008205","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2008205"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02008205","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yokoya, T.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Yokoya","familyNameLang":"en"}],"givenNames":[{"givenName":"T.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Fukushima, A.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Fukushima","familyNameLang":"en"}],"givenNames":[{"givenName":"A.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Kiss, T.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Kiss","familyNameLang":"en"}],"givenNames":[{"givenName":"T.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Kobayashi, K.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Kobayashi","familyNameLang":"en"}],"givenNames":[{"givenName":"K.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Shin, S.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Shin","familyNameLang":"en"}],"givenNames":[{"givenName":"S.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Moriguchi, K.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Moriguchi","familyNameLang":"en"}],"givenNames":[{"givenName":"K.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Shintani, A.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Shintani","familyNameLang":"en"}],"givenNames":[{"givenName":"A.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Fukuoka, Hiroshi","creatorNameLang":"en"}],"familyNames":[{"familyName":"Fukuoka","familyNameLang":"en"}],"givenNames":[{"givenName":"Hiroshi","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Yamanaka, Shoji","creatorNameLang":"en"}],"familyNames":[{"familyName":"Yamanaka","familyNameLang":"en"}],"givenNames":[{"givenName":"Shoji","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2001 American Physical Society"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"420","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"We study the electronic structure and superconducting transition of silicon clathrate Ba8Si46 (Tc=8 K) using photoemission spectroscopy. We observe a narrow band at the Fermi level (EF), whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K [2Δ(0)/kBTc=3.51]. Fine structures associated with phonons are observed within 70 meV of EF. These results characterize Ba8Si46 as a weak-coupling superconductor most probably driven by phonon.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"AA11187113","subitem_source_identifier_type":"NCID"},{"subitem_source_identifier":"1098-0121","subitem_source_identifier_type":"ISSN"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"172504"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-11-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"17","bibliographicPageStart":"172504","bibliographicVolumeNumber":"64","bibliographic_titles":[{"bibliographic_title":"Physical Review B - Condensed Matter and Materials Physics"},{"bibliographic_title":"Physical Review B - Condensed Matter and Materials Physics"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevB.64.172504","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1103/PhysRevB.64.172504","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"PhysRevB_64_172504inclErratum.pdf","filesize":[{"value":"180.0 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2008205/files/PhysRevB_64_172504inclErratum.pdf"},"version_id":"bd52c063-adfe-48b7-9354-430621a68ad7"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"16642"},"item_title":"Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2008205","relation_version_is_last":true,"title":["Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-22T03:20:47.959419+00:00"}