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Origin of band-A emission in diamond thin films

https://hiroshima.repo.nii.ac.jp/records/2008198
https://hiroshima.repo.nii.ac.jp/records/2008198
d0c59496-15f0-4dee-990e-a60f164e04f1
名前 / ファイル ライセンス アクション
PhysRevB_63_245328.pdf PhysRevB_63_245328.pdf (760.5 KB)
Item type デフォルトアイテムタイプ_(フル)(1)
公開日 2023-03-18
タイトル
タイトル Origin of band-A emission in diamond thin films
言語 en
作成者 Takeuchi, D.

× Takeuchi, D.

en Takeuchi, D.

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Watanabe, H.

× Watanabe, H.

en Watanabe, H.

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Yamanaka, Shoji

× Yamanaka, Shoji

en Yamanaka, Shoji

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Okushi, H.

× Okushi, H.

en Okushi, H.

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Sawada, H.

× Sawada, H.

en Sawada, H.

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Ichinose, H.

× Ichinose, H.

en Ichinose, H.

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Sekiguchi, T.

× Sekiguchi, T.

en Sekiguchi, T.

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Kajimura, K.

× Kajimura, K.

en Kajimura, K.

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利情報
権利情報 Copyright (c) 2001 American Physical Society
主題
主題Scheme NDC
主題 420
内容記述
内容記述 By means of scanning cathodoluminescence (CL) measurements, high-resolution transmission electron microscopy (HRTEM), and electron energy loss spectroscopy (EELS), we have studied the origin of the band-A emission in homoepitaxial diamond thin films grown using microwave-plasma chemical vapor deposition (CVD). A broad luminescence peak at around 2.9 eV, the band-A emission, was observed in homoepitaxial diamond films with nonepitaxial crystallites (NC's), but not in the high-quality films without NC's. The scanning CL measurements showed that the band-A emission appeared only at NC sites. TEM revealed that the NC's contained defects such as dislocations and several types of grain boundary (GB). Further, HRTEM indicated that several types of incoherent GB existed within the NC's including five-, six-, and seven-member carbon atom rings. These were the same GB's as those in polycrystalline CVD diamond films that had sp2-like structure of carbon atoms as indicated by the observation of the 1s-π signal in EELS. It is then reasonable to consider that, if sp2-like structures behave as defects in the network of sp3 structure of diamond, one possible origin of band-A emission might be the sp2 defects in the GB's and dislocations. The band-A emission behavior in homoepitaxial CVD diamond films is the same as that in polycrystalline diamond films. The origin of the band-A emission generally observed in many kinds of CVD diamond is discussed relative to these results.
言語 en
出版者
出版者 American Physical Society
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
関連情報
識別子タイプ DOI
関連識別子 10.1103/PhysRevB.63.245328
関連情報
識別子タイプ DOI
関連識別子 http://dx.doi.org/10.1103/PhysRevB.63.245328
収録物識別子
収録物識別子タイプ NCID
収録物識別子 AA11187113
収録物識別子
収録物識別子タイプ ISSN
収録物識別子 1098-0121
開始ページ
開始ページ 245328
書誌情報 Physical Review B - Condensed Matter and Materials Physics
Physical Review B - Condensed Matter and Materials Physics

巻 63, 号 24, p. 245328, 発行日 2001-06-15
旧ID 16649
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