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Sharp luminescent lines from single three-dimensionally confined GaAs/AlAs structures grown on a patterned GaAs substrate

https://hiroshima.repo.nii.ac.jp/records/2008177
https://hiroshima.repo.nii.ac.jp/records/2008177
20e970ad-ba4d-49b3-a563-d43be2c410d8
名前 / ファイル ライセンス アクション
PhysRevB_60_13727.pdf PhysRevB_60_13727.pdf (152.7 KB)
Item type デフォルトアイテムタイプ_(フル)(1)
公開日 2023-03-18
タイトル
タイトル Sharp luminescent lines from single three-dimensionally confined GaAs/AlAs structures grown on a patterned GaAs substrate
言語 en
作成者 Kasai, Jun-ichi

× Kasai, Jun-ichi

en Kasai, Jun-ichi

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Tanaka, Sigehisa

× Tanaka, Sigehisa

en Tanaka, Sigehisa

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Higuchi, Katsuhiko

× Higuchi, Katsuhiko

en Higuchi, Katsuhiko

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Katayama, Yoshifumi

× Katayama, Yoshifumi

en Katayama, Yoshifumi

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利情報
権利情報 Copyright (c) 1999 American Physical Society.
内容記述
内容記述 We report extremely sharp lines of photoluminescence (PL) and photoluminescence excitation (PLE) spectra from single three-dimensionally confined GaAs/AlAs structures grown on square mesas patterned onto a GaAs substrate. The single structures, which had a 10-nm vertical thickness and a 0.2-μm lateral width, were measured at 8 K by microphotoluminescence. At high-excitation power, the PL and PLE spectra of the single structures exhibited broad exciton peaks several meV wide. However, when the excitation power was lowered, each heavy-hole exciton peak in the PL and PLE spectra became a series of sharp lines whose widths were respectively, about 0.5 and 0.3 meV. The sharp lines of the PL spectra were probably due to the radiative recombination of excitons localized into lateral potential islands in the single structure. In the PL spectrum at a lower excitation power, a sharp line split into extremely sharp lines (≅ 0.04 meV). This fine splitting possibly represents a difference in the confinement energy of excitons localized in potential islands that have almost the same local thickness but differ in size and microstructure. From our analysis of the PLE spectra and the resonant PL spectra, we conclude that a sharp line in a PLE spectrum is not directly related to any particular sharp line of a PL spectrum. The sharp lines of the PLE spectra can be interpreted in terms of exciton absorption whose energy is determined by the locally averaged thickness of the single structure.
言語 en
出版者
出版者 American Physical Society
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
関連情報
識別子タイプ DOI
関連識別子 10.1103/PhysRevB.60.13727
関連情報
識別子タイプ DOI
関連識別子 http://dx.doi.org/10.1103/PhysRevB.60.13727
収録物識別子
収録物識別子タイプ ISSN
収録物識別子 1098-0121
収録物識別子
収録物識別子タイプ NCID
収録物識別子 AA11187113
開始ページ
開始ページ 13 727
書誌情報 Physical Review B - Condensed Matter and Materials Physics
Physical Review B - Condensed Matter and Materials Physics

巻 60, 号 19, p. 13 727-13 734, 発行日 1999-11-15
旧ID 18805
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