| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
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|
タイトル |
Electronic structure of YbGa1.15Si0.85 and YbGaxGe2-x probed by resonant x-ray emission and photoelectron spectroscopies |
|
言語 |
en |
| 作成者 |
Yamaoka, Hitoshi
Jarrige, Ignace
Tsujii, Naohito
Imai, Motoharu
Lin, Jung-Fu
Matsunami, Masaharu
Eguchi, Ritsuko
Arita, Masashi
Shimada, Kenya
Namatame, Hirofumi
Taniguchi, Masaki
Taguchi, Munetaka
Senba, Yasunori
Ohashi, Haruhiko
Hiraoka, Nozomu
Ishii, Hirofumi
Tsuei, Ku-Ding
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| アクセス権 |
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|
アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
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|
権利情報 |
Copyright (c) 2011 The American Physical Society |
| 主題 |
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主題Scheme |
NDC |
|
主題 |
420 |
| 内容記述 |
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内容記述 |
We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa_<1.15>Si_<0.85> and nonsuperconducting ternary germanide YbGa_xGe_<2-x> (x = 1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa_<1.15>Si_<0.85> no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb^<2+> state partially including itinerant electrons to the localized Yb^<3+> state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa_<1.15>Si_<0.85> and YbGa_xGe_<2-x>, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa_<1.15>Si_<0.85> and the resultant electronic structure may have a crucial role in the occurrence of superconductivity. |
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言語 |
en |
| 出版者 |
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出版者 |
The American Physical Society |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
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|
出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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識別子タイプ |
DOI |
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関連識別子 |
10.1103/PhysRevB.83.104525 |
| 関連情報 |
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|
識別子タイプ |
DOI |
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|
関連識別子 |
http://dx.doi.org/10.1103/PhysRevB.83.104525 |
| 収録物識別子 |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1098-0121 |
| 収録物識別子 |
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収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA11187113 |
| 開始ページ |
|
|
開始ページ |
104525-1 |
| 書誌情報 |
Physical Review B
Physical Review B
巻 83,
号 10,
p. 104525-1-104525-10,
発行日 2011-03-31
|
| 旧ID |
31965 |
PhysRevB_83_104525.pdf (1.1 MB)
