{"created":"2025-02-21T04:12:19.294383+00:00","id":2008084,"links":{},"metadata":{"_buckets":{"deposit":"ea41af86-edd9-4f1c-9cee-c23ad7593940"},"_deposit":{"created_by":41,"id":"2008084","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2008084"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02008084","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"High-resolution photoemission study of the temperature-dependent c-f hybridization gap in the Kondo semiconductor YbB12","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takeda, Yukiharu","creatorNameLang":"en"}],"familyNames":[{"familyName":"Takeda","familyNameLang":"en"}],"givenNames":[{"givenName":"Yukiharu","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Arita, Masashi","creatorNameLang":"en"}],"familyNames":[{"familyName":"Arita","familyNameLang":"en"}],"givenNames":[{"givenName":"Masashi","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Higashiguchi, Mitsuharu","creatorNameLang":"en"}],"familyNames":[{"familyName":"Higashiguchi","familyNameLang":"en"}],"givenNames":[{"givenName":"Mitsuharu","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Shimada, Kenya","creatorNameLang":"en"}],"familyNames":[{"familyName":"Shimada","familyNameLang":"en"}],"givenNames":[{"givenName":"Kenya","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Namatame, Hirofumi","creatorNameLang":"en"}],"familyNames":[{"familyName":"Namatame","familyNameLang":"en"}],"givenNames":[{"givenName":"Hirofumi","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Taniguchi, Masaki","creatorNameLang":"en"}],"familyNames":[{"familyName":"Taniguchi","familyNameLang":"en"}],"givenNames":[{"givenName":"Masaki","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Iga, Fumitoshi","creatorNameLang":"en"}],"familyNames":[{"familyName":"Iga","familyNameLang":"en"}],"givenNames":[{"givenName":"Fumitoshi","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Takabatake, Toshiro","creatorNameLang":"en"}],"familyNames":[{"familyName":"Takabatake","familyNameLang":"en"}],"givenNames":[{"givenName":"Toshiro","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2006 American Physical Society"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"The temperature-dependent metal-to-insulator transition in the Kondo semiconductor YbB12 single crystal has been studied by means of high-resolution photoemission spectroscopy with a tunable photon energy. An energy gap in the valence band is gradually formed below T1~150 K, and at the same time, the Yb 4f7/2 Kondo peak at 55 meV grows and shifts to a lower binding energy. Below T2~60 K, an additional spectral feature at 15 meV becomes apparent in the Yb 4f and Yb 5d derived spectra, indicating a strongly hybridized character. The 15 meV feature in the Yb 4f derived spectra is intense at the L point of the Brillouin zone and diminishes away from the L point. These results indicate that the energy gap is formed by the hybridization between the Yb 4f and Yb 5d states.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"1098-0121","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA11187113","subitem_source_identifier_type":"NCID"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"033202"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"033202","bibliographicVolumeNumber":"73","bibliographic_titles":[{"bibliographic_title":"Physical Review B"},{"bibliographic_title":"Physical Review B"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevB.73.033202","subitem_relation_type_select":"DOI"}},{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1103/PhysRevB.73.033202","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"PhysRevB033202.pdf","filesize":[{"value":"417.3 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2008084/files/PhysRevB033202.pdf"},"version_id":"d688e308-0e80-497c-aea8-178a523ec7d5"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"14990"},"item_title":"High-resolution photoemission study of the temperature-dependent c-f hybridization gap in the Kondo semiconductor YbB12","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2008084","relation_version_is_last":true,"title":["High-resolution photoemission study of the temperature-dependent c-f hybridization gap in the Kondo semiconductor YbB12"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-22T03:09:09.885693+00:00"}