{"created":"2025-02-21T04:00:31.039816+00:00","id":2007706,"links":{},"metadata":{"_buckets":{"deposit":"2b6de5b5-60fb-4962-a6e1-1144fb8dee0f"},"_deposit":{"created_by":41,"id":"2007706","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2007706"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02007706","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sunami, Hideo","creatorNameLang":"en"}],"familyNames":[{"familyName":"Sunami","familyNameLang":"en"}],"givenNames":[{"givenName":"Hideo","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Yoshikawa, Koji","creatorNameLang":"en"}],"familyNames":[{"familyName":"Yoshikawa","familyNameLang":"en"}],"givenNames":[{"givenName":"Koji","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Okuyama, Kiyoshi","creatorNameLang":"en"}],"familyNames":[{"familyName":"Okuyama","familyNameLang":"en"}],"givenNames":[{"givenName":"Kiyoshi","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2006 Elsevier B.V."}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"Beam channel","subitem_subject_scheme":"Other"},{"subitem_subject":"High-aspect ratio","subitem_subject_scheme":"Other"},{"subitem_subject":"Metal-oxide-semiconductor transistor","subitem_subject_scheme":"Other"},{"subitem_subject":"Plasma doping","subitem_subject_scheme":"Other"},{"subitem_subject":"Three-dimension","subitem_subject_scheme":"Other"},{"subitem_subject":"540","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"Besides further scaling of the metal-oxide-semiconductor transistor, which has continuously been achieved for these 35 years in large-scale integration, three-dimensional transistors having fin-type silicon substrate have been increasingly important for its promising potential to ultimately scaled ones. In this research, a beam-channel transistor featuring very-tall silicon beam has been proposed and its structure formation techniques are summarized in this article. They are tall beam formation, conformal gate formation, uniform source/drain formation, and conformal metal contact.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"Elsevier B.V."}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"0167-9317","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA10693521","subitem_source_identifier_type":"NCID"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"1740"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-04","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4-9","bibliographicPageEnd":"1744","bibliographicPageStart":"1740","bibliographicVolumeNumber":"83","bibliographic_titles":[{"bibliographic_title":"Microelectronic Engineering"},{"bibliographic_title":"Microelectronic Engineering"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_b1a7d7d4d402bcce","subitem_version_type":"AO"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.mee.2006.01.270","subitem_relation_type_select":"DOI"}},{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1016/j.mee.2006.01.270","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"MicroelecEng_83_1740.pdf","filesize":[{"value":"498.8 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2007706/files/MicroelecEng_83_1740.pdf"},"version_id":"6779b967-f5ec-490d-9a69-4a02d05b7856"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"15364"},"item_title":"High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2007706","relation_version_is_last":true,"title":["High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-21T10:47:18.145628+00:00"}