| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
|
|
タイトル |
Electrical Reliabilities of Highly Cross-Linked Porous Silica Film with Cesium Doping |
|
言語 |
en |
| 作成者 |
Kayaba, Yasuhisa
Kohmura, Kazuo
Tanaka, Hirofumi
Seino, Yutaka
Odaira, Toshiyuki
Nishiyama, Fumitaka
Kinoshita, Keizo
Chikaki, Shinichi
Kikkawa, Takamaro
|
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
|
|
権利情報 |
Copyright (c) 2008 The Electrochemical Society |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
caesium |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
chemisorption |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
electric breakdown |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
leakage currents |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
low-k dielectric thin films |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
permittivity |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
porous materials |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
silicon compounds |
| 主題 |
|
|
主題Scheme |
NDC |
|
主題 |
540 |
| 内容記述 |
|
|
内容記述 |
A highly cross-linked porous silica dielectric (PoSiO) film was fabricated at a low temperature of 350°C. PoSiO films were derived by sol-gel method and their pore surface silanol groups were silylated with 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) by vapor phase treatment. To promote the degree of siloxane cross-linkage of the film, cesium (Cs) was added to the precursor solution with the amount of 0, 5, 15, and 30 wt.-ppm as a catalyst. Then the amount of methyl-silicon-three oxygen (Me-Si T-type) and hydrogen-silicon-three oxygen (H-Si T-type) bridged structures of the chemisorbed TMCTS were increased, and the amount of surface silanol groups was decreased markedly with the increasing amount of Cs concentration. Leakage current and dielectric constant were measured under various humidity conditions, and which were hardly degraded for the highly cross-linked PoSiO owing to its small amount of residual silanol groups and adsorbed water. It was also shown that the amount of mobile protons originated from the silanol groups became negligible. Time zero dielectric breakdown (TZDB) field strength was improved to 6.7 MV/cm and a projected time dependent dielectric breakdown (TDDB) lifetime satisfied 10 years for Cs 30 ppm doped PoSiO under a stress conditions of 220°C and |E| = 1 MV/cm. |
|
言語 |
en |
| 出版者 |
|
|
出版者 |
The Electrochemical Society, Inc. |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
AO |
|
出版タイプResource |
http://purl.org/coar/version/c_b1a7d7d4d402bcce |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1149/1.2977973 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://dx.doi.org/10.1149/1.2977973 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0013-4651 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00697016 |
| 開始ページ |
|
|
開始ページ |
G258 |
| 書誌情報 |
Journal of The Electrochemical Society
Journal of The Electrochemical Society
巻 155,
号 11,
p. G258-G264,
発行日 2008
|
| 旧ID |
25917 |
JElectrochemSoc_155_G258.pdf (439.0 KB)
