{"created":"2025-02-21T03:44:57.778082+00:00","id":2007209,"links":{},"metadata":{"_buckets":{"deposit":"2bb2b925-0795-4c52-94d0-d1287756f89d"},"_deposit":{"created_by":41,"id":"2007209","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2007209"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02007209","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"High thermoelectric performance of Cu substituted type-VIII clathrate Ba8Ga16-xCuxSn30 single crystals","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Deng, Shukang","creatorNameLang":"en"}],"familyNames":[{"familyName":"Deng","familyNameLang":"en"}],"givenNames":[{"givenName":"Shukang","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Saiga, Yuta","creatorNameLang":"en"}],"familyNames":[{"familyName":"Saiga","familyNameLang":"en"}],"givenNames":[{"givenName":"Yuta","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Kajisa, Kousuke","creatorNameLang":"en"}],"familyNames":[{"familyName":"Kajisa","familyNameLang":"en"}],"givenNames":[{"givenName":"Kousuke","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Takabatake, Toshiro","creatorNameLang":"en"}],"familyNames":[{"familyName":"Takabatake","familyNameLang":"en"}],"givenNames":[{"givenName":"Toshiro","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2011 American Institute of Physics"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"420","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"Single crystalline samples of type-VIII clathrate Ba_8Ga_<16-x>Cu_xSn_<30> (0 ≤x ≤ 0.033) were prepared by the Sn-flux method. Upon substituting Cu for Ga, the carrier mobility at 300 K increases twice while the carrier density stays in the range 3.1-4.2×10^<19>/cm3. Consequently, the electrical resistivity is decreased from 5.3 mΩcm for x=0 to 3.2 mΩcm for x=0.033. Irrespective of x, the Seebeck coefficient is largely negative and linearly changes with temperature in the range 300<T<600 K. The thermal conductivity is in the range 0.68-0.74 W/Km at 300 K for all samples. The dimensionless figure of merit ZT for x=0.033 reaches the maximum of 1.35 at 540 K.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"The American Institute of Physics"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"103704-1"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-05-18","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageEnd":"103704-4","bibliographicPageStart":"103704-1","bibliographicVolumeNumber":"109","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"},{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.3583570","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.3583570","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"JApplPhys_109_103704.pdf","filesize":[{"value":"1.1 MB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2007209/files/JApplPhys_109_103704.pdf"},"version_id":"54954eef-92f9-4148-92cd-8bb626b6dfcf"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"31998"},"item_title":"High thermoelectric performance of Cu substituted type-VIII clathrate Ba8Ga16-xCuxSn30 single crystals","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2007209","relation_version_is_last":true,"title":["High thermoelectric performance of Cu substituted type-VIII clathrate Ba8Ga16-xCuxSn30 single crystals"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-21T09:27:16.200055+00:00"}