{"created":"2025-02-21T03:44:41.604369+00:00","id":2007201,"links":{},"metadata":{"_buckets":{"deposit":"ba761e16-b0a7-42b3-9129-aaaa704a4f2c"},"_deposit":{"created_by":41,"id":"2007201","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2007201"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02007201","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hwang, Jong-Il","creatorNameLang":"en"}],"familyNames":[{"familyName":"Hwang","familyNameLang":"en"}],"givenNames":[{"givenName":"Jong-Il","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Osafune, Yoshitaka","creatorNameLang":"en"}],"familyNames":[{"familyName":"Osafune","familyNameLang":"en"}],"givenNames":[{"givenName":"Yoshitaka","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Kobayashi, Masaki","creatorNameLang":"en"}],"familyNames":[{"familyName":"Kobayashi","familyNameLang":"en"}],"givenNames":[{"givenName":"Masaki","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ebata, Kazuaki","creatorNameLang":"en"}],"familyNames":[{"familyName":"Ebata","familyNameLang":"en"}],"givenNames":[{"givenName":"Kazuaki","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ooki, Yasuhiro","creatorNameLang":"en"}],"familyNames":[{"familyName":"Ooki","familyNameLang":"en"}],"givenNames":[{"givenName":"Yasuhiro","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ishida, Yukiaki","creatorNameLang":"en"}],"familyNames":[{"familyName":"Ishida","familyNameLang":"en"}],"givenNames":[{"givenName":"Yukiaki","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Fujimori, Atsushi","creatorNameLang":"en"}],"familyNames":[{"familyName":"Fujimori","familyNameLang":"en"}],"givenNames":[{"givenName":"Atsushi","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Takeda, Yukiharu","creatorNameLang":"en"}],"familyNames":[{"familyName":"Takeda","familyNameLang":"en"}],"givenNames":[{"givenName":"Yukiharu","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Okane, Tetsuo","creatorNameLang":"en"}],"familyNames":[{"familyName":"Okane","familyNameLang":"en"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Saitoh, Yuji","creatorNameLang":"en"}],"familyNames":[{"familyName":"Saitoh","familyNameLang":"en"}],"givenNames":[{"givenName":"Yuji","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Kobayashi, Keisuke","creatorNameLang":"en"}],"familyNames":[{"familyName":"Kobayashi","familyNameLang":"en"}],"givenNames":[{"givenName":"Keisuke","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Tanaka, Arata","creatorNameLang":"en"}],"familyNames":[{"familyName":"Tanaka","familyNameLang":"en"}],"givenNames":[{"givenName":"Arata","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2007 American Institute of Physics."}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"We have performed an in situ depth profile study of Mn-doped GaN prepared by a low temperature thermal diffusion method using photoemission and x-ray absorption spectroscopy. It was revealed from the core-level photoemission measurements that Mn ions are diffused into a deep (∼70 Å) region of the GaN substrates and that the line shapes of Mn 3d partial density of states obtained by resonant photoemission measurements were close to that of Ga1-x Mnx N thin films grown by molecular-beam epitaxy. From x-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements at the Mn L edge, it was revealed that the doped Mn ions were in the divalent Mn2+ state and primarily paramagnetic. In magnetization measurements, weak hysteresis was detected in samples prepared using p -type GaN substrates while samples using n -type GaN substrates showed only paramagnetism.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"103709-1"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-05-22","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageEnd":"103709-6","bibliographicPageStart":"103709-1","bibliographicVolumeNumber":"101","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"},{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.2732679","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.2732679","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"JApplPhys_101_103709.pdf","filesize":[{"value":"1.0 MB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2007201/files/JApplPhys_101_103709.pdf"},"version_id":"aa585e59-04e4-4904-bf2c-180fb7d5ef92"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"19269"},"item_title":"Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2007201","relation_version_is_last":true,"title":["Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-21T09:26:32.699345+00:00"}