| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
|
|
タイトル |
Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics |
|
言語 |
en |
| 作成者 |
Zhu, Shiyang
Nakajima, Anri
Ohashi, Takuo
Miyake, Hideharu
|
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
|
|
権利情報 |
Copyright (c) 2006 American Institute of Physics. |
| 内容記述 |
|
|
内容記述 |
Bulk (well) bias effects (grounded, positively biased, and floating) on both static and dynamic negative bias temperature instability of p -channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics were systematically investigated. The device degradation under both static and dynamic negative bias temperature (NBT) stresses with relatively large gate voltage (Vg) is significantly enhanced by a positive bulk bias (Vb). Moreover, the device degradation under bipolar pulsed bias temperature (BT) stress is dramatically enhanced by floating the bulk electrode. Both phenomena can be attributed to an additional degradation related to hot hole injection. The holes are energized by an electrical field of the induced depletion region between channel and bulk provided by the positive Vb or, in the case of bipolar pulsed BT stress with the bulk electrode floating, by the transient depletion region below the channel induced by the p-n junction between source (drain) and bulk upon the gate voltage Vg being switched from positive to negative with a transition time less than about 0.2-100 ms. |
|
言語 |
en |
| 出版者 |
|
|
出版者 |
American Institute of Physics |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1063/1.2183409 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://dx.doi.org/10.1063/1.2183409 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0021-8979 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00693547 |
| 書誌情報 |
Journal of Applied Physics
Journal of Applied Physics
巻 99,
号 6,
発行日 2006-05-15
|
| 旧ID |
18602 |
JApplPhys_99_064510.pdf (214.4 KB)
