Item type |
デフォルトアイテムタイプ_(フル)(1) |
公開日 |
2023-03-18 |
タイトル |
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タイトル |
Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires |
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言語 |
en |
作成者 |
Kawamura, Kensaku
Kidera, Toshiro
Nakajima, Anri
Yokoyama, Shin
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アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
権利情報 |
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権利情報 |
Copyright (c) 2002 American Institute of Physics. |
内容記述 |
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内容記述 |
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-Si) wires were fabricated by low-pressure chemical vapor deposition. The electrical conduction mechanism has been investigated at low temperatures (down to ~5 K), and observation by transmission electron microscopy (TEM) was carried out. Single-electron effects such as Coulomb oscillations have been observed at temperatures up to 80 K. The size of the island in the poly-Si wires was estimated from the electrical properties, and it was in the same order as the grain size of the poly-Si measured by TEM. A maximum tunnel barrier height of ~26 meV of the poly-Si grain boundary is obtained from the temperature dependence of the conductance of the sample. A model for the electronic conduction through multiple islands was proposed from the width dependence of their electrical properties. |
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言語 |
en |
出版者 |
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出版者 |
American Institute of Physics |
言語 |
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言語 |
eng |
資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
出版タイプ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
関連情報 |
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識別子タイプ |
DOI |
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関連識別子 |
10.1063/1.1464650 |
関連情報 |
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識別子タイプ |
DOI |
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関連識別子 |
http://dx.doi.org/10.1063/1.1464650 |
収録物識別子 |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
0021-8979 |
収録物識別子 |
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収録物識別子タイプ |
NCID |
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収録物識別子 |
AA00693547 |
開始ページ |
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開始ページ |
5213 |
書誌情報 |
Journal of Applied Physics
Journal of Applied Physics
巻 91,
号 8,
p. 5213-5220,
発行日 2002-04-15
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旧ID |
18593 |