{"created":"2025-02-21T03:40:06.743716+00:00","id":2007060,"links":{},"metadata":{"_buckets":{"deposit":"b9874c6d-75e9-4c15-90f1-e619555dfb15"},"_deposit":{"created_by":41,"id":"2007060","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2007060"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02007060","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Gate-extension overlap control by Sb tilt implantation","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Shibahara, Kentaro","creatorNameLang":"en"}],"familyNames":[{"familyName":"Shibahara","familyNameLang":"en"}],"givenNames":[{"givenName":"Kentaro","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Maeda, Nobuhide","creatorNameLang":"en"}],"familyNames":[{"familyName":"Maeda","familyNameLang":"en"}],"givenNames":[{"givenName":"Nobuhide","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2007 The Institute of Electronics, Information and Communication Engineers"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"MOSFET","subitem_subject_scheme":"Other"},{"subitem_subject":"extension","subitem_subject_scheme":"Other"},{"subitem_subject":"gate","subitem_subject_scheme":"Other"},{"subitem_subject":"overlap","subitem_subject_scheme":"Other"},{"subitem_subject":"tilt implantation","subitem_subject_scheme":"Other"},{"subitem_subject":"Sb","subitem_subject_scheme":"Other"},{"subitem_subject":"540","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"電子情報通信学会"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"0916-8524","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA10826283","subitem_source_identifier_type":"NCID"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"973"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"977","bibliographicPageStart":"973","bibliographicVolumeNumber":"E90-C","bibliographic_titles":[{"bibliographic_title":"IEICE-Transactions on Electronics"},{"bibliographic_title":"IEICE-Transactions on Electronics"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1093/ietele/e90-c.5.973","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1093/ietele/e90-c.5.973","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"IEICETransElectron_E90C-5_973.pdf","filesize":[{"value":"533.7 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2007060/files/IEICETransElectron_E90C-5_973.pdf"},"version_id":"5057665d-0d65-4b4d-a64b-a8d93a2e8e16"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"20723"},"item_title":"Gate-extension overlap control by Sb tilt implantation","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2007060","relation_version_is_last":true,"title":["Gate-extension overlap control by Sb tilt implantation"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-21T09:03:14.543394+00:00"}