| Item type |
デフォルトアイテムタイプ_（フル）(1) |
| 公開日 |
2023-03-18 |
| タイトル |
|
|
タイトル |
Pulse waveform dependence on AC bias temperature instability in pMOSFETs |
|
言語 |
en |
| 作成者 |
Zhu, Shiyang
Nakajima, Anri
Ohashi, Takuo
Miyake, Hideharu
|
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利情報 |
|
|
権利情報 |
Copyright (c) 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
Bias temperature instability (BTI) |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
Dynamic stress |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
Interface trap generation |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
pMOSFET |
| 主題 |
|
|
主題Scheme |
Other |
|
主題 |
Pulse waveform |
| 主題 |
|
|
主題Scheme |
NDC |
|
主題 |
540 |
| 内容記述 |
|
|
内容記述 |
In this letter, the waveform effects on the degradation enhancement of pMOSFETs under high-frequency (≥ 10[4] Hz) bipolar-pulsed bias-temperature (BT) stresses were systematically studied. The enhancement was found to be mainly governed by the fall time (tF) of the pulse waveform, namely, the transition time of the silicon surface potential from strong accumulation to strong inversion, rather than the pulse rise time (tR) and the pulse duty factor (D). The enhancement decreases significantly with tF increasing, and is almost eliminated when tF is larger than ∼60 ns. This new finding is consistent with our newly proposed assumption that the recombination of free holes and trapped electrons at the SiO2/Si interface and/or near-interface states can enhance the interface trap generation. |
|
言語 |
en |
| 出版者 |
|
|
出版者 |
IEEE |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1109/LED.2005.853645 |
| 関連情報 |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://dx.doi.org/10.1109/LED.2005.853645 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0741-3106 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00231428 |
| 開始ページ |
|
|
開始ページ |
658 |
| 書誌情報 |
IEEE Electron Device Letters
IEEE Electron Device Letters
巻 26,
号 9,
p. 658-660,
発行日 2005-09
|
| 旧ID |
15049 |
IEEEElectDevLett_26_658.pdf (182.1 KB)
