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Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation
https://hiroshima.repo.nii.ac.jp/records/2006286
https://hiroshima.repo.nii.ac.jp/records/200628623f68475-5764-4317-b625-339ca935797e
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ApplPhysLett_98_053501.pdf (242.4 KB)
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| Item type | デフォルトアイテムタイプ_（フル）(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2023-03-18 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation | |||||||||||
| 言語 | en | |||||||||||
| 作成者 |
Nakajima, Anri
× Nakajima, Anri
× Kudo, Takashi
× Ito, Takashi
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| アクセス権 | ||||||||||||
| アクセス権 | open access | |||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||
| 権利情報 | ||||||||||||
| 権利情報 | (c) 2011 American Institute of Physics | |||||||||||
| 主題 | ||||||||||||
| 主題Scheme | NDC | |||||||||||
| 主題 | 540 | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述 | Metal-oxide-semiconductor field-effect transistors (MOSFETs) with a functional gate, which enables self-adjustment of threshold voltage (Vth), were proposed for ultralow power operation and fabricated with conventional complementary metal-oxide-semiconductor (CMOS) technology. In the on-current state of fabricated nMOSFETs, electron ejection from the charge trap layer by direct tunneling makes Vth low and increases on-current further. In the off-current state, electron injection into the charge trap layer makes Vth high and suppresses subthreshold leakage current. Although the characteristic time of electron transfer of the functional gate from on-current state to off-current state is fairly long, the logic mode operating principle has been verified with the experimental device. Reduction of tunnel oxide thickness (Tox) will reduce the time, which will lead to the practical use of the proposed device for CMOS logic application. | |||||||||||
| 言語 | en | |||||||||||
| 出版者 | ||||||||||||
| 出版者 | American Institute of Physics | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 関連情報 | ||||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | 10.1063/1.3549178 | |||||||||||
| 関連情報 | ||||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.3549178 | |||||||||||
| 収録物識別子 | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||
| 収録物識別子 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00543431 | |||||||||||
| 開始ページ | ||||||||||||
| 開始ページ | 053501 | |||||||||||
| 書誌情報 |
Applied Physics Letters Applied Physics Letters 巻 98, 号 5, p. 053501, 発行日 2011 |
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| 旧ID | 34089 | |||||||||||
