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Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions
https://hiroshima.repo.nii.ac.jp/records/2006270
https://hiroshima.repo.nii.ac.jp/records/2006270138e7b02-07ac-48dc-8580-2f9b614e9c70
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ApplPhysLett_81_733.pdf (196.7 KB)
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| Item type | デフォルトアイテムタイプ_（フル）(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2023-03-18 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions | |||||||||||
| 言語 | en | |||||||||||
| 作成者 |
Nakajima, Anri
× Nakajima, Anri
× Ito, Yuhei
× Yokoyama, Shin
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| アクセス権 | ||||||||||||
| アクセス権 | open access | |||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||
| 権利情報 | ||||||||||||
| 権利情報 | Copyright (c) 2002 American Institute of Physics. | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述 | Uniformly doped Si single-electron transistors consisting of a one-dimensional regular array of multiple tunnel junctions (MTJs) and islands have been fabricated. The Coulomb blockade effect is found to play an important role in carrier conduction in the MTJ system at low temperatures (6 K). The conduction mechanism can be interpreted well by considering soliton. The soliton extends less than three islands in our MTJs, and the energy of a single soliton is found to be 0.024 eV from an analysis of low-temperature current–voltage characteristics. For high-temperature operation, it is effective to reduce the parasitic capacitance of each island, which leads to an increase in soliton length. | |||||||||||
| 言語 | en | |||||||||||
| 出版者 | ||||||||||||
| 出版者 | American Institute of Physics | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 関連情報 | ||||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | 10.1063/1.1492318 | |||||||||||
| 関連情報 | ||||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | http://dx.doi.org/10.1063/1.1492318 | |||||||||||
| 収録物識別子 | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||
| 収録物識別子 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00543431 | |||||||||||
| 開始ページ | ||||||||||||
| 開始ページ | 733 | |||||||||||
| 書誌情報 |
Applied Physics Letters Applied Physics Letters 巻 81, 号 4, p. 733-735, 発行日 2002-07-22 |
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| 旧ID | 18591 | |||||||||||
