{"created":"2025-02-21T03:15:49.238250+00:00","id":2006264,"links":{},"metadata":{"_buckets":{"deposit":"d98e50f3-0560-47e7-a607-701cc84a46ef"},"_deposit":{"created_by":41,"id":"2006264","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2006264"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02006264","sets":["1730444907710"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yokoyama, Shin","creatorNameLang":"en"}],"familyNames":[{"familyName":"Yokoyama","familyNameLang":"en"}],"givenNames":[{"givenName":"Shin","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ohba, Kenji","creatorNameLang":"en"}],"familyNames":[{"familyName":"Ohba","familyNameLang":"en"}],"givenNames":[{"givenName":"Kenji","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Nakajima, Anri","creatorNameLang":"en"}],"familyNames":[{"familyName":"Nakajima","familyNameLang":"en"}],"givenNames":[{"givenName":"Anri","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2001 American Institute of Physics."}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"Atomic-layer deposition of Si on SiO2 with a self-limiting growth mode was achieved at substrate temperatures between 355 and 385 °C by means of alternate supply of Si2H6 and SiCl4 gas sources. The growth rate was saturated at 2 ML per cycle at these temperatures and for Si2H6 exposure time over 120 s. The smooth surface (∼0.26 nm in arithmetic average roughness) was obtained under the self-limiting condition irrespective of a film thickness up to 6.5 nm.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"617"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-07-30","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"619","bibliographicPageStart":"617","bibliographicVolumeNumber":"79","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"},{"bibliographic_title":"Applied Physics Letters"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.1389508","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1389508","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"ApplPhysLett_79_617.pdf","filesize":[{"value":"103.3 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2006264/files/ApplPhysLett_79_617.pdf"},"version_id":"098288d5-f31f-44ed-a195-29652f188129"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"18585"},"item_title":"Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4","item_type_id":"40003","owner":"41","path":["1730444907710"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2006264","relation_version_is_last":true,"title":["Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-21T07:05:25.379751+00:00"}