{"created":"2025-02-21T02:30:27.480033+00:00","id":2006024,"links":{},"metadata":{"_buckets":{"deposit":"ca754fe6-f4ae-49b0-b1a1-652ebd8a59f7"},"_deposit":{"created_by":41,"id":"2006024","owner":"41","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2006024"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02006024","sets":["1730444908512:1730444916333"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Current Oscillations and Domain Instability in Semiconductors","subitem_title_language":"en"},{"subitem_title":"半導体における電流振動とドメイン不安定性","subitem_title_language":"ja"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"生塩, 研一","creatorNameLang":"ja"},{"creatorName":"Oshio, Ken-ichi","creatorNameLang":"en"}],"familyNames":[{"familyName":"生塩","familyNameLang":"ja"},{"familyName":"Oshio","familyNameLang":"en"}],"givenNames":[{"givenName":"研一","givenNameLang":"ja"},{"givenName":"Ken-ichi","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright(c) by Author"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"540","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"Abstract / p2 Contents / p4 1 Introduction / p1  1.1 Negative Differential Conductivity(NDC) / p2  1.2 Gunn effect / p3  1.3 Gunn effect with impact ionization / p6  1.4 Recombination instability / p7  1.5 Chaos in semiconductors / p8  1.6 Composition of following chapters / p9 2 Chaotic current oscillations in the Gunn-effect device under the dc and the rf bias voltages / p13  2.1 Introduction / p13  2.2 Equations of motion and the method of solution / p14  2.3 The motion under the dc bias voltage / p18  2.4 The motion under the dc and rf bias voltage / p20 3 Non-periodic current oscillations in the Gunn-effect device with the impact-ionization effect / p33  3.1 Introduction / p33  3.2 Equations of motion and the method of solution / p34  3.3 Simulational results / p38 4 Current oscillations induced by recombination instability in semiconductors / p49  4.1 Introduction / p49  4.2 Equations of motion and simulation method / p49  4.3 Simulational results / p54 5 Summary and conclusion / p71","subitem_description_type":"TableOfContents"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186819068":{"attribute_name":"Identifier 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