{"created":"2025-02-21T01:54:36.107152+00:00","id":2005962,"links":{},"metadata":{"_buckets":{"deposit":"dce8930f-ea5a-4dfd-873c-d3b005a73f1d"},"_deposit":{"created_by":41,"id":"2005962","owner":"41","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2005962"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02005962","sets":["1730444908512:1730444916333"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Investigation on thin-film polycrystalline silicon for solar cells by a new solid phase crystallization method","subitem_title_language":"en"},{"subitem_title":"新しい固相成長法による太陽電池用薄膜多結晶シリコンに関する研究","subitem_title_language":"ja"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"松山, 隆夫","creatorNameLang":"ja"},{"creatorName":"Matsuyama, Takao","creatorNameLang":"en"}],"familyNames":[{"familyName":"松山","familyNameLang":"ja"},{"familyName":"Matsuyama","familyNameLang":"en"}],"givenNames":[{"givenName":"隆夫","givenNameLang":"ja"},{"givenName":"Takao","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright(c) by Author"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"570","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"1 Introduction / p1  　1.1 History of solar cells / p1  　1.2 Conventional fabrication method of thin-film polycrystalline silicon for solar cells / p2  　1.3 Solid phase crystallization method / p6  　1.4 A new solid phase crystallization (SPC) method / p8  　References / p12  2 Theoretical background / p14  　2.1 Introduction / p14  　2.2 Solid phase crystallization / p15  　2.3 Transport of polycrystalline silicon films / p18  　2.4 Current-voltage characteristics of p-n junction / p21  　2.5 Summary / p26  　References / p27  3 Development of thin-film polycrystalline silicon by a new SPC method / p28  　3.1 Introduction / p28  　3.2 Effect of impurities (dopants) / p33  　3.3 Optimum starting materials for the SPC method / p66  　3.4 Investigation of substrates / p83  　3.5 Solid phase crystallization using crystal silicon as a seed / p97  　3.6 Summary / p108  　References / p110  4 Development of solar cells using thin-film polycrystalline silicon / p111  　4.1 Introduction / p111  　4.2 Experimental technique / p112  　4.3 A new junction fabrication technology / p116  　4.4 Solar cells using thin-film polycrystalline silicon fabricated by the SPC method / p136  　4.5 Summary / p147  　References / p149  5.Summary / p150  Acknowledgement / p153","subitem_description_type":"TableOfContents"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186819068":{"attribute_name":"Identifier Registration","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.11501/3098660","subitem_identifier_reg_type":"JaLC"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"1"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicPageStart":"1"}]},"item_1617187087799":{"attribute_name":"Dissertation Number","attribute_value_mlt":[{"subitem_dissertationnumber":"乙第2526号"}]},"item_1617187112279":{"attribute_name":"Degree Name","attribute_value_mlt":[{"subitem_degreename":"博士(工学)","subitem_degreename_language":"ja"},{"subitem_degreename":"Engineering","subitem_degreename_language":"en"}]},"item_1617187136212":{"attribute_name":"Date 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