{"created":"2025-02-21T01:52:45.747518+00:00","id":2005949,"links":{},"metadata":{"_buckets":{"deposit":"b1bba357-f4ca-4051-975d-9b12ed01fe5c"},"_deposit":{"created_by":41,"id":"2005949","owner":"41","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2005949"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02005949","sets":["1730444908512:1730444916333"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"ULSIプロセスにおけるエッチング及びCVDの表面反応過程に関する研究","subitem_title_language":"ja"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"坂上, 弘之","creatorNameLang":"ja"},{"creatorName":"Sakaue, Hiroyuki","creatorNameLang":"en"}],"familyNames":[{"familyName":"坂上","familyNameLang":"ja"},{"familyName":"Sakaue","familyNameLang":"en"}],"givenNames":[{"givenName":"弘之","givenNameLang":"ja"},{"givenName":"Hiroyuki","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright(c) by Author"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"540","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"目次 / p1  第1章 序説 / p1  　1.1 ULSIプロセスにおけるエッチングおよびCVD技術 / p1  　1.2 表面反応研究の重要性 / p2  　1.3 本研究の目的 / p2  　1.4 概要 / p3  　第1章の参考文献 / p6  第2章 デジタル・エッチングによるSiの原子層エッチングと表面反応過程 / p9  　2.1 はじめに / p9  　2.2 実験方法 / p9  　2.3 原子層エッチング / p10  　2.4 Si/F系の低温エッチング機構 / p12  　2.5 マイクロ・ローディング / p16  　2.6 微細細線による側壁への損傷評価 / p17  　2.7 F、Cl/SiによるSiエッチング速度のAr⁺、Ne⁺イオンエネルギー依存性 / p22  　2.8 まとめ / p23  　第2章の参考文献 / p24  第3章 フッ素、塩素/Si反応表面へのレーザ照射効果 / p25  　3.1 はじめに / p25  　3.2 実験装置と実験方法 / p25  　3.3 RIE表面へのエキシマレーザ照射による増速効果 / p25  　3.4 XPSとLIDによるフッ素/Si表面反応観察 / p28  　3.5 まとめ / p33  　第3章の参考文献 / p33  第4章 AIのレーザ誘起パターン転写エッチング / p35  　4.1 はじめに / p35  　4.2 実験装置および実験方法 / p35  　4.3 エッチング終点検出 / p37  　4.4 エッチング特性とパターン転写のモデル / p37  　4.5 酸素注入効果 / p39  　4.6 まとめ / p42  　第4章の参考文献 / p42  第5章 CH₃OHを用いたITO膜エッチングの反応機構 / p43  　5.1 はじめに / p43  　5.2 実験方法 / p43  　5.3 エッチング特性 / p44  　5.4 XPSを用いたエッチング反応機構の検討 / p47  　5.5 CH₃OHプラズマに曝されたレジスト表面の評価 / p51  　5.6 各種下地材料とのエッチング選択比の比較 / p53  　5.7 まとめ / p53  第5章の参考文献 / p53  第6章 SiH₄/O₂を用いたSi酸化膜のデジタルCVD / p55  　6.1 はじめに / p55  　6.2 実験方法 / p55  　6.3 堆積特性と膜質評価 / p56  　6.4 まとめ / p63  　第6章の参考文献 / p63  第7章 有機系ガスを用いたデジタルCVDと反応機構 / p65  　7.1 有機系ガスによるコンフォーマル堆積 / p65  　7.2 in-situ FTIR法によるTES/水素反応過程の観察 / p72  　7.3 デジタル法によるSi酸化膜および窒化膜の形成 / p79  　7.4 まとめ / p84  　第7章の参考文献 / p86  第8章 AIの選択CVDの反応過程 / p87  　8.1 はじめに / p87  　8.2 DMAIHを用いた実験 / p87  　8.3 in-situ FTIR-ATRによる選択成長過程の検討 / p95  　8.4 DEAIHを用いた実験 / p99  　8.5 まとめ / p107  　第8章の参考文献 / p107  第9章 結論 / p109  謝辞 / p112  発表論文リスト / p113  　1.主要関係論文リスト / p113  　2.参考論文リスト / p115","subitem_description_type":"TableOfContents"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_1617186819068":{"attribute_name":"Identifier Registration","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.11501/3079884","subitem_identifier_reg_type":"JaLC"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"1"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicPageStart":"1"}]},"item_1617187087799":{"attribute_name":"Dissertation Number","attribute_value_mlt":[{"subitem_dissertationnumber":"乙第2418号"}]},"item_1617187112279":{"attribute_name":"Degree Name","attribute_value_mlt":[{"subitem_degreename":"博士(工学)","subitem_degreename_language":"ja"},{"subitem_degreename":"Engineering","subitem_degreename_language":"en"}]},"item_1617187136212":{"attribute_name":"Date Granted","attribute_value_mlt":[{"subitem_dategranted":"1993-05-13"}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"doctoral thesis","resourceuri":"http://purl.org/coar/resource_type/c_db06"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_be7fb7dd8ff6fe43","subitem_version_type":"NA"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"1) H. Sakaue, S. Iseda, K. Asami, J. Yamamoto, M. Hirose and Y. Horiike; \"Atomic Layer Controlled Digital Etching of Silicon\", Jpn. J. Appl. Phys. 29 (1990) pp. 2648-2652."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"2) H. Sakaue, M. Nakano, T. Ichihara and Y. Horiike; \"Digital Chemical Vapor Deposition of SiO2 Using a Repetitive Reaction of Triethylsilane/Hydrogen and Oxidation\", Jpn. J. Appl. Phys. 30 (1991) pp.L124-L127."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"3) H. Sakaue, K. Asami, T. Ichihara, S. Ishizuka, K. Kawamura and Y. Horiike; \"Digital Process for Advanced VLSI's and Surface Reaction Study\", Materials Research Society Symp. Proc. Vol. 222 (1991) pp.195-206."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"4) H. Sakaue, M. Koto and Y. Horiike; \"In-Situ X-Ray Photoelectron Spectroscopy of Reactive-Ion-Etched Surfaces of Indium-Tin Oxide Film Employing Alcohol Gas\", Jpn. J. Appl. Phys. 31 (1992) pp.2006-2010."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"5) H. Sakaue, S. Miyazaki and M. Hirose; \"Laser-Induced Pattern Projection Etching of Aluminum\", Proc. of Symp. on Dry Process, (Tokyo, 1988) pp.187-190."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"6) H. Kawamoto, H. Sakaue, S. Takehiro and Y. Horiike; \"Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS Measurement\", Jpn. J. Appl. Phys., 29 (1990) pp. 2657-2662."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"7) Y. Horiike, T. Ichihara and H. Sakaue; \"Filling of Si Oxide into a Deep Trench Using Digital CVD Method\", Appl. Surface Sci., 46 (1990) pp. 168-174."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"8) Y. Horiike, T. Tanaka, M. Nakano, S. Iseda, H. Sakaue, A. Nagata, H. Shindo, S. Miyazaki and M. Hirose; \"Digital Chemical Vapor Deposition and Etching Technologies for Semiconductor Processing\", J. Vac. Sci. Technol., A8 (1990) pp. 1845-1850."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"9) M. Nakano, H. Sakaue, A. Nagata, H. Kawamoto, M. Hirose and Y. Horiike; \"Digital Chemical Vapor Deposition of SiO2\", Appl. Phys. Lett., 57 (1990) pp. 6475-6478."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"10) K. Kawamura, S. Ishizuka, H. Sakaue and Y. Horiike; \"Diagnostics of Hydrogen Role on the Si Surface Reaction Process Employing In-situ Fourier Transform Infrared-Attenuated Total Reflection\", Jpn. J. Appl. Phys. 30 (1991) pp.3215-3218."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"11) Y. Horiike, K. Asami, T. Hashimoto, J. Yamamoto, H. Sakaue, H. Shindo and Y. Todokoro; \"Low Energy Silicon Etching Technologies\", Proc. of Microcircuit Engineering 90, Ed. by G. Declerck, L. Van den hove and F. Coopmans, (Belgium, 1990) pp. 417-424."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"12) T. Ichihara, H. Sakaue, T. Okada and Y. Horiike; \"Conformal Chemical Vapor Deposition of Insulator Films Employing Digital Method\", Proc. of Symp. on Dry Process, (Tokyo, 1990) pp.35-40."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"13) H. Sakaue, K. Asami, M. Yamamoto, M. Kawasaki and Y. Horiike; \"Excimer Laser Enhanced Reactive Ion Etching\", Proc. of Intern. 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