{"created":"2025-02-18T09:58:44.472459+00:00","id":2005010,"links":{},"metadata":{"_buckets":{"deposit":"b2662be1-3482-447c-84a5-00ac42cfc198"},"_deposit":{"created_by":41,"id":"2005010","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2005010"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02005010","sets":["1730444908512:1730444915582"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Study of NAND Flash Memory Cells","subitem_title_language":"en"},{"subitem_title":"NAND型フラッシュメモリセルの研究","subitem_title_language":"ja"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"有留, 誠一","creatorNameLang":"ja"},{"creatorName":"Aritome, Seiichi","creatorNameLang":"en"}],"familyNames":[{"familyName":"有留","familyNameLang":"ja"},{"familyName":"Aritome","familyNameLang":"en"}],"givenNames":[{"givenName":"誠一","givenNameLang":"ja"},{"givenName":"Seiichi","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright(c) by Author"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"500","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"This paper presents the device technologies of NAND Flash memory to realize low bit cost and high reliability.     First, planar (two-dimensional) NAND Flash memory cells are discussed. Four types of NAND Flash memory cells of the LOCOS (LOCal Oxidation of Silicon) isolation cell, the SA-STI cell (Self-Aligned Shallow Trench Isolation cell) with FG wing, the SA-STI cell without FG wing, and SWATT cell (Side WAll Transfer Transistor cell) have been proposed and developed. By using these proposed memory cell, NAND Flash memory cell has been scaled down over 20 years to achieve small memory die size, high performance, and high reliability.……","subitem_description_language":"en"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617187087799":{"attribute_name":"Dissertation Number","attribute_value_mlt":[{"subitem_dissertationnumber":"甲第6228号"}]},"item_1617187112279":{"attribute_name":"Degree Name","attribute_value_mlt":[{"subitem_degreename":"博士(工学)","subitem_degreename_language":"ja"},{"subitem_degreename":"Engineering","subitem_degreename_language":"en"}]},"item_1617187136212":{"attribute_name":"Date Granted","attribute_value_mlt":[{"subitem_dategranted":"2013-09-25"}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"doctoral thesis","resourceuri":"http://purl.org/coar/resource_type/c_db06"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_be7fb7dd8ff6fe43","subitem_version_type":"NA"}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"k6228_3.pdf","filesize":[{"value":"12.4 MB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2005010/files/k6228_3.pdf"},"version_id":"08cf8038-0647-47cc-85a0-05d94455501c"},{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"k6228_1.pdf","filesize":[{"value":"238.9 KB"}],"mimetype":"application/pdf","url":{"objectType":"abstract","url":"https://hiroshima.repo.nii.ac.jp/record/2005010/files/k6228_1.pdf"},"version_id":"c5b8d7b7-c416-4bbc-9896-822574b5871d"},{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"k6228_2.pdf","filesize":[{"value":"185.7 KB"}],"mimetype":"application/pdf","url":{"objectType":"abstract","url":"https://hiroshima.repo.nii.ac.jp/record/2005010/files/k6228_2.pdf"},"version_id":"95e00c30-916d-4b08-835e-5893be302525"}]},"item_1617944105607":{"attribute_name":"Degree Grantor","attribute_value_mlt":[{"subitem_degreegrantor":[{"subitem_degreegrantor_language":"ja","subitem_degreegrantor_name":"広島大学"}],"subitem_degreegrantor_identifier":[{"subitem_degreegrantor_identifier_name":"15401","subitem_degreegrantor_identifier_scheme":"kakenhi"}]},{"subitem_degreegrantor":[{"subitem_degreegrantor_language":"en","subitem_degreegrantor_name":"Hiroshima University"}]}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"35129"},"item_title":"Study of NAND Flash Memory Cells","item_type_id":"40003","owner":"41","path":["1730444915582"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2005010","relation_version_is_last":true,"title":["Study of NAND Flash Memory Cells"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-20T07:19:26.493715+00:00"}