{"created":"2025-02-18T09:38:43.525573+00:00","id":2004313,"links":{},"metadata":{"_buckets":{"deposit":"b0ba0062-82d5-4724-967f-8dd2eaa09c47"},"_deposit":{"created_by":41,"id":"2004313","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2004313"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02004313","sets":["1730444908512:1730444913453"]},"author_link":[],"control_number":"2004313","item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Compact Modeling of Gallium-Nitride-based High Electron Mobility Transistor for High-Power Circuit Applications","subitem_title_language":"en"},{"subitem_title":"高電力用途における窒化ガリウム高電子移動度トランジスタのコンパクトモデル","subitem_title_language":"ja"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"溝口, 健","creatorNameLang":"ja"},{"creatorName":"Mizoguchi, Takeshi","creatorNameLang":"en"}],"familyNames":[{"familyName":"溝口","familyNameLang":"ja"},{"familyName":"Mizoguchi","familyNameLang":"en"}],"givenNames":[{"givenName":"健","givenNameLang":"ja"},{"givenName":"Takeshi","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"420","subitem_subject_scheme":"NDC"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617187087799":{"attribute_name":"Dissertation Number","attribute_value_mlt":[{"subitem_dissertationnumber":"甲第7236号"}]},"item_1617187112279":{"attribute_name":"Degree Name","attribute_value_mlt":[{"subitem_degreename":"博士(工学)","subitem_degreename_language":"ja"},{"subitem_degreename":"Doctor of Engineering","subitem_degreename_language":"en"}]},"item_1617187136212":{"attribute_name":"Date Granted","attribute_value_mlt":[{"subitem_dategranted":"2017-03-23"}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"doctoral thesis","resourceuri":"http://purl.org/coar/resource_type/c_db06"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_be7fb7dd8ff6fe43","subitem_version_type":"NA"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"Analysis of GaN High Electron Mobility Transistor Switching Characteristics for High-Power Applications with HiSIM-GaN Compact Model; Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, and Hans JUrgen Mattausch; Japanese Journal of Applied Physics, Vol. 55, 04EG03-1-5, (2016)."}],"subitem_relation_type":"references"},{"subitem_relation_name":[{"subitem_relation_name_text":"Modeling of Field-Plate Effect on Gallium-Nitride-based High Electron Mobility Transistors for High-Power Applications; Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, and Hans Jurgen Mattausch; The Institute of Electronics, Information and Communication Engineers Transactions on Electronics, Vol. E100-C, No. 3, pp. 321-328, (2017)."}],"subitem_relation_type":"references"},{"subitem_relation_type":"references","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/JJAP.55.04EG03","subitem_relation_type_select":"DOI"}},{"subitem_relation_type":"references","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1587/transele.E100.C.321","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"k7236_1.pdf","filesize":[{"value":"211.1 KB"}],"mimetype":"application/pdf","url":{"objectType":"abstract","url":"https://hiroshima.repo.nii.ac.jp/record/2004313/files/k7236_1.pdf"},"version_id":"4a504572-f43a-412e-84aa-427288232056"},{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"k7236_2.pdf","filesize":[{"value":"174.4 KB"}],"mimetype":"application/pdf","url":{"objectType":"abstract","url":"https://hiroshima.repo.nii.ac.jp/record/2004313/files/k7236_2.pdf"},"version_id":"86a76074-2c78-4e6e-94bb-8dfde3ae686f"},{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2025-04-25"}],"filename":"k7236_3.pdf","filesize":[{"value":"8.5 MB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2004313/files/k7236_3.pdf"},"version_id":"86210382-19ef-433d-9679-8454a8f38a53"}]},"item_1617944105607":{"attribute_name":"Degree Grantor","attribute_value_mlt":[{"subitem_degreegrantor":[{"subitem_degreegrantor_language":"ja","subitem_degreegrantor_name":"広島大学"}],"subitem_degreegrantor_identifier":[{"subitem_degreegrantor_identifier_name":"15401","subitem_degreegrantor_identifier_scheme":"kakenhi"}]},{"subitem_degreegrantor":[{"subitem_degreegrantor_language":"en","subitem_degreegrantor_name":"Hiroshima University"}]}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"43616"},"item_title":"Compact Modeling of Gallium-Nitride-based High Electron Mobility Transistor for High-Power Circuit Applications","item_type_id":"40003","owner":"41","path":["1730444913453"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2004313","relation_version_is_last":true,"title":["Compact Modeling of Gallium-Nitride-based High Electron Mobility Transistor for High-Power Circuit Applications"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-04-25T02:56:55.861094+00:00"}