{"created":"2025-02-18T01:43:56.858462+00:00","id":2000995,"links":{},"metadata":{"_buckets":{"deposit":"e19d208c-4219-4bd2-a868-8633e16dacde"},"_deposit":{"created_by":41,"id":"2000995","owners":[41],"pid":{"revision_id":0,"type":"depid","value":"2000995"},"status":"published"},"_oai":{"id":"oai:hiroshima.repo.nii.ac.jp:02000995","sets":["1730444917621"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"All-chromium single electron transistor fabricated with plasma oxidation","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kubota, T.","creatorNameLang":"en"}],"familyNames":[{"familyName":"Kubota","familyNameLang":"en"}],"givenNames":[{"givenName":"T.","givenNameLang":"en"}]},{"creatorNames":[{"creatorName":"Yagi, Ryuta","creatorNameLang":"en"}],"familyNames":[{"familyName":"Yagi","familyNameLang":"en"}],"givenNames":[{"givenName":"Ryuta","givenNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2006 Elsevier B.V."}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"SET transistor","subitem_subject_scheme":"Other"},{"subitem_subject":"plasma oxidation","subitem_subject_scheme":"Other"},{"subitem_subject":"420","subitem_subject_scheme":"NDC"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"We fabricated all-chromium single electron transistor using electron beam lithography and shadow evaporation, employing a plasma oxidation technique. This improved the controllability of the tunnel resistance determined in the oxidation process. We measured the device characteristics of the fabricated SET transistor at 90 mK and found that Coulomb blockade with little leakage current, showing excellent quality of the tunnel barrier.","subitem_description_language":"en"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"Elsevier B.V."}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"AA10673546","subitem_source_identifier_type":"NCID"},{"subitem_source_identifier":"0921-4526","subitem_source_identifier_type":"ISSN"}]},"item_1617187024783":{"attribute_name":"Page Start","attribute_value_mlt":[{"subitem_start_page":"57"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-08-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"58","bibliographicPageStart":"57","bibliographicVolumeNumber":"383","bibliographic_titles":[{"bibliographic_title":"Physica B: Condensed Matter"},{"bibliographic_title":"Physica B: Condensed Matter"}]}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_b1a7d7d4d402bcce","subitem_version_type":"AO"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.physb.2006.03.055","subitem_relation_type_select":"DOI"}},{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1016/j.physb.2006.03.055","subitem_relation_type_select":"DOI"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2023-03-18"}],"displaytype":"simple","filename":"PhysicaB_383_57.pdf","filesize":[{"value":"187.3 KB"}],"mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://hiroshima.repo.nii.ac.jp/record/2000995/files/PhysicaB_383_57.pdf"},"version_id":"2305d8ce-2238-4227-8204-1df4c6c29199"}]},"item_1732771732025":{"attribute_name":"旧ID","attribute_value":"24938"},"item_title":"All-chromium single electron transistor fabricated with plasma oxidation","item_type_id":"40003","owner":"41","path":["1730444917621"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2023-03-18"},"publish_date":"2023-03-18","publish_status":"0","recid":"2000995","relation_version_is_last":true,"title":["All-chromium single electron transistor fabricated with plasma oxidation"],"weko_creator_id":"41","weko_shared_id":-1},"updated":"2025-02-18T03:06:25.912007+00:00"}