2026-03-10T07:05:18Z https://hiroshima.repo.nii.ac.jp/oai

oai:hiroshima.repo.nii.ac.jp:02007195 2025-02-21T09:25:59Z 1730444907710

Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands Ohkura, Kensaku Ohkura Kensaku Kitade, Tetsuya Kitade Tetsuya Nakajima, Anri Nakajima Anri open access Copyright (c) 2005 American Institute of Physics. We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined islands. The conduction mechanism was systematically investigated in the temperature range from 4.2 K to 100 K. Despite their island size variation, some of the SETs showed clear periodic and quasiperiodic Coulomb oscillations. This is in contrast to the conventional idea that only geometrically uniform islands show periodic Coulomb oscillations. We showed theoretically that periodic Coulomb oscillation appears under the small deviation of gate capacitances with the period determined by the average of the capacitances. We also found that the formed charge soliton that was conducted through the islands was spread over the whole array. This may also contribute to the periodicity of the Coulomb oscillation. The SET with multiple islands was applied to an Exclusive-OR circuit and achieved a room temperature operation. American Institute of Physics 2005-12-15 eng journal article VoR https://hiroshima.repo.nii.ac.jp/records/2007195 10.1063/1.2143116 http://dx.doi.org/10.1063/1.2143116 0021-8979 AA00693547 Journal of Applied Physics Journal of Applied Physics 98 12 https://hiroshima.repo.nii.ac.jp/record/2007195/files/JApplPhys_98_124503.pdf 281.1 KB