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oai:hiroshima.repo.nii.ac.jp:02007060 2025-02-21T09:03:14Z 1730444907710

Gate-extension overlap control by Sb tilt implantation Shibahara, Kentaro Shibahara Kentaro Maeda, Nobuhide Maeda Nobuhide open access Copyright (c) 2007 The Institute of Electronics, Information and Communication Engineers MOSFET extension gate overlap tilt implantation Sb 540 Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects. 電子情報通信学会 2007 eng journal article VoR https://hiroshima.repo.nii.ac.jp/records/2007060 10.1093/ietele/e90-c.5.973 http://dx.doi.org/10.1093/ietele/e90-c.5.973 0916-8524 AA10826283 IEICE-Transactions on Electronics IEICE-Transactions on Electronics E90-C 5 973 973 977 https://hiroshima.repo.nii.ac.jp/record/2007060/files/IEICETransElectron_E90C-5_973.pdf 533.7 KB